| Yazarlar |
Doç. Dr. Elif AŞIKUZUN TOKEŞER
Kastamonu Üniversitesi, Türkiye |
Prof. Dr. Özgür ÖZTÜRK
Kastamonu Üniversitesi, Türkiye |
Lütfi Arda
Bahçeşehir Üniversitesi, Türkiye |
|
Cabir Terzioğlu
Bolu Abant İzzet Baysal Üniversitesi, Türkiye |
| Özet |
| In this study, rare earth element (Er) doped ZnO nano thin films which have dual structure of (Zn1−xErx)O (x = 0.0, 0.01, 0.02, 0.03, 0.04 and 0.05) are prepared by using sol–gel method. The microstructure and electrical properties of prepared nano thin films are investigated. Nano thin films are coated on the glass substrate by using the dip coating method. The films are annealed at 600 °C for 30 min. The X-ray diffractometer (XRD), scanning electron microscopy and atomic force microscopy are used to determine the structural properties such as crystal structures, grain sizes, surface morphology; Hall effect measurements system is used to investigate the electrical properties of materials. XRD results showed that all Er doped nano thin films have a hexagonal structure and (002) orientation. Surface morphologies of ZnErO thin films are denser and more uniform than the undoped ZnO thin film. According to the Hall effect measurements, the resistivity of the films decreased with increasing Er concentration from 0 to 4 % and then slightly increased at 5 % Er. |
| Anahtar Kelimeler |
| Makale Türü | Özgün Makale |
| Makale Alt Türü | SSCI, AHCI, SCI, SCI-Exp dergilerinde yayımlanan tam makale |
| Dergi Adı | Journal of Materials Science: Materials in Electronics |
| Dergi Tarandığı Indeksler | SCI-Expanded |
| Makale Dili | İngilizce |
| Basım Tarihi | 10-2017 |
