| Yazarlar |
Sevim Demirözü Şenol
Abant İzzet Baysal Üniversitesi, Türkiye |
|
Abdulkadir Şenol
Abant İzzet Baysal Üniversitesi, Türkiye |
Prof. Dr. Özgür ÖZTÜRK
Kastamonu Üniversitesi, Türkiye |
|
Murat Erdem
Abant İzzet Baysal Üniversitesi, Türkiye |
| Özet |
| Using an Indium tin oxide (ITO) ceramic target (In2O3:SnO2, 90:10 wt%), ITO thin films were deposited by conventional direct current magnetron sputtering technique onto glass substrates at room temperature. The obtained ITO films were annealed at 400 °C for different annealing times (1, 2, 5, 7, and 9 h). The effect of annealing time on their structural, optical and electrical properties was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microcopy (AFM), ultra violet–visible (UV–Vis) spectrometer, and temperature dependence Hall measurements. XRD data of obtained ITO films reveal that the films were polycrystalline with cubic structure and exhibit (222), (400) and (440) crystallographic planes of In2O3. AFM and Scanning Electron Microscopy SEM have been used to probe the surface roughness and the morphology of the films. The refractive index (n), thickness and porosity (%) of the films were evaluated from transmittance spectra obtained in the range 350–700 nm by UV–Vis. The optical band gap of ITO film was found to be varying from 3.35 to 3.47 eV with the annealing time. The annealing time dependence of resistivity, carrier concentration, carrier mobility, sheet resistance, and figure of merit values of the films at room temperature were discussed. The carrier concentration of the films increased from 1.21 × 1020 to 1.90 × 1020 cm−3, the Hall mobility increased from 11.38 to 18 cm2 V−1 s−1 and electrical resistivity decreased from 3.97 × 10−3 to 2.13 × 10−3 Ω cm with the increase of annealing time from 1 to 9 h. Additionally, the temperature dependence of the carrier concentration, and carrier mobility for the as-deposited and 400 °C annealed ITO films for 2 and 9 h were analysed in the temperature range of 80–350 K. |
| Anahtar Kelimeler |
| Makale Türü | Özgün Makale |
| Makale Alt Türü | SSCI, AHCI, SCI, SCI-Exp dergilerinde yayımlanan tam makale |
| Dergi Adı | Journal of Materials Science: Materials in Electronics |
| Dergi ISSN | 0957-4522 |
| Dergi Tarandığı Indeksler | SCI |
| Makale Dili | İngilizce |
| Basım Tarihi | 11-2014 |
| Cilt No | 25 |
| Sayı | 11 |
| Sayfalar | 4992 / 4999 |
| Doi Numarası | 10.1007/s10854-014-2262-y |
| Makale Linki | http://link.springer.com/10.1007/s10854-014-2262-y |
| Atıf Sayıları | |
| WoS | 28 |
| SCOPUS | 26 |
| Google Scholar | 31 |
