Effect of annealing time on the structural optical and electrical characteristics of DC sputtered ITO thin films
Yazarlar (4)
S. D. Senol
Bolu Abant İzzet Baysal Üniversitesi, Türkiye
Bolu Abant İzzet Baysal Üniversitesi, Türkiye
A. Senol
Kastamonu Üniversitesi, Türkiye
Kastamonu Üniversitesi, Türkiye
Prof. Dr. Özgür ÖZTÜRK Kastamonu Üniversitesi, Türkiye
M. Erdem
Bolu Abant İzzet Baysal Üniversitesi, Türkiye
Bolu Abant İzzet Baysal Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Journal of Materials Science Materials in Electronics | ||
| Dergi ISSN | 0957-4522 Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI | ||
| Makale Dili | İngilizce | Basım Tarihi | 11-2014 |
| Cilt / Sayı / Sayfa | 25 / 11 / 4992–4999 | DOI | 10.1007/s10854-014-2262-y |
| Makale Linki | http://link.springer.com/10.1007/s10854-014-2262-y | ||
| Özet |
| Using an Indium tin oxide (ITO) ceramic target (In2O3:SnO2, 90:10 wt%), ITO thin films were deposited by conventional direct current magnetron sputtering technique onto glass substrates at room temperature. The obtained ITO films were annealed at 400 °C for different annealing times (1, 2, 5, 7, and 9 h). The effect of annealing time on their structural, optical and electrical properties was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microcopy (AFM), ultra violet–visible (UV–Vis) spectrometer, and temperature dependence Hall measurements. XRD data of obtained ITO films reveal that the films were polycrystalline with cubic structure and exhibit (222), (400) and (440) crystallographic planes of In2O3. AFM and Scanning Electron Microscopy SEM have been used to probe the surface roughness and the morphology of the films. The refractive index (n), thickness and … |
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| Atıf Sayıları | |
| Web of Science | 36 |
| Scopus | 34 |
| Google Scholar | 42 |