Microstructural and electrical characterizations of transparent Er-doped ZnO nano thin films prepared by sol–gel process
Yazarlar (4)
Doç. Dr. Elif AŞIKUZUN TOKEŞER Kastamonu Üniversitesi, Türkiye
Prof. Dr. Özgür ÖZTÜRK Kastamonu Üniversitesi, Türkiye
L. Arda
Bahçeşehir Üniversitesi, Türkiye
Bahçeşehir Üniversitesi, Türkiye
C. Terzioglu
Bolu Abant İzzet Baysal Üniversitesi, Türkiye
Bolu Abant İzzet Baysal Üniversitesi, Türkiye
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Özgün Makale
(SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
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| Dergi Adı | Journal of Materials Science Materials in Electronics (Q2) | ||
| Dergi ISSN | 0957-4522 Dergi Bilgileri (2017) | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 10-2017 |
| Kabul Tarihi | – | Yayınlanma Tarihi | 28-06-2017 |
| Cilt / Sayı / Sayfa | 28 / 19 / 14314–14322 | DOI | 10.1007/s10854-017-7291-x |
| Makale Linki | http://link.springer.com/10.1007/s10854-017-7291-x | ||
| UAK Araştırma Alanları |
Süper İletkenler
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| Özet |
| In this study, rare earth element (Er) doped ZnO nano thin films which have dual structure of (Zn1−xErx)O (x = 0.0, 0.01, 0.02, 0.03, 0.04 and 0.05) are prepared by using sol–gel method. The microstructure and electrical properties of prepared nano thin films are investigated. Nano thin films are coated on the glass substrate by using the dip coating method. The films are annealed at 600 °C for 30 min. The X-ray diffractometer (XRD), scanning electron microscopy and atomic force microscopy are used to determine the structural properties such as crystal structures, grain sizes, surface morphology; Hall effect measurements system is used to investigate the electrical properties of materials. XRD results showed that all Er doped nano thin films have a hexagonal structure and (002) orientation. Surface morphologies of ZnErO thin films are denser and more uniform than the undoped ZnO thin film. According to the Hall effect … |
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BM Sürdürülebilir Kalkınma Amaçları
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| Web of Science | 23 |
| Scopus | 23 |
| Google Scholar | 31 |