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Influence of diffusion annealing temperature on physical and mechanical properties of Cu diffused bulk MgB2 superconductor      
Yazarlar
Musa Doğruer
Abant İzzet Baysal Üniversitesi, Türkiye
Yusuf Zalaoğlu
Osmaniye Korkut Ata Üniversitesi, Türkiye
Osman Görür
Abant İzzet Baysal Üniversitesi, Türkiye
Prof. Dr. Özgür ÖZTÜRK Prof. Dr. Özgür ÖZTÜRK
Kastamonu Üniversitesi, Türkiye
Gürcan Yıldırım
Abant İzzet Baysal Üniversitesi, Türkiye
Ahmet Varilci
Abant İzzet Baysal Üniversitesi, Türkiye
E Yücel
Cabir Terzioğlu
Abant İzzet Baysal Üniversitesi, Türkiye
Özet
This study reports not only the effect of Cu diffusion on physical and mechanical properties of bulk MgB2 superconductors with the aid of Vickers microhardness (Hv) measurements but also the diffusion coefficient and the activation energy of copper (Cu) in the MgB2 system using the resistivity measurements for the first time. Cu diffusion is examined over the different annealing temperature such as 650, 700, 750, 800 and 850 C via the successive removal of thin layers and resistivity measurement of the sample. Further, Vickers microhardness, elastic modulus, yield strength, fracture toughness and brittleness index values of the samples studied are evaluated from microhardness measurements. It is found that all the results obtained depend strongly on the diffusion annealing temperature and applied load. The microhardness values increase with ascending the annealing temperature up to 850 C owing to the increment in the strength of the bonds between grains but decreasing with the enhancement in the applied load due to Indentation Size Effect behaviour of the bulk samples. Moreover, the diffusion coefficient is observed to enhance from 2.84 × 10-8 to 3.22 × 10 -7 cm2 s-1 with the increase of the diffusion-annealing temperature, confirming that the Cu diffusion is more dominant at higher temperatures compared to lower ones. Besides, temperature dependence of the Cu diffusion coefficient is described by the Arrhenius relation D = 2.66 × 10-3 exp(-1.09 ± 0.05 eV/k BT) and the related activation energy of the Cu ions in the MgB 2 system is obtained to be about 1.09 eV. Based on the relatively low value of activation energy, the migration of the Cu ions primarily proceeds through defects such as pore surfaces and grain boundaries in the polycrystalline structure, resulting in the improvement of the physical and mechanical properties of the bulk MgB2 samples. © 2012 Springer Science+Business Media, LLC.
Anahtar Kelimeler
Makale Türü Özgün Makale
Makale Alt Türü SSCI, AHCI, SCI, SCI-Exp dergilerinde yayımlanan tam makale
Dergi Adı JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Dergi ISSN 0957-4522
Dergi Tarandığı Indeksler SCI
Makale Dili İngilizce
Basım Tarihi 02-2013
Cilt No 24
Sayı 2
Sayfalar 776 / 783
Doi Numarası 10.1007/s10854-012-0809-3
Makale Linki http://link.springer.com/10.1007/s10854-012-0809-3