| Yazarlar (5) |
Bekir Gürbulak
Türkiye |
|
Neslihan Ekinci
Türkiye |
|
Afsoun Askhasi
|
|
Sevda Sarıtaş
Türkiye |
Öğr. Gör. Kazım Yasin ÖZBEY
Türkiye |
| Özet |
| GaSe single crystal has been grown by using the Bridgman/Stockbarger method. The ingots have no cracks and voids on the surface in ingots. There is no process to polish and clean treatments at cleavage faces of these samples because of the natural mirror-like cleavage faces. GaSe has specific impurities arising from its crystal structure. Sample was cleaved along the cleavage planes (001). The structure and lattice parameters of the GaSe semiconductors has been analyzed using a X-ray diffractometer (XRD), Scanning electron microscopy (SEM) and energy dispersive X-rays (EDX) techniques. It is found that the GaSe crystal has hexagonal structure, quite close 2θ peak values. XRD measurements indicate that there is an increase in peak intensities at specific annealing temperatures (300 and 500 C) and a decrease in higher annealing temperatures (700 C). The calculated lattice constants were found to be a= b= 3.749 Å c= 15.907 Åfor GaSe which correspond to a hexagonal structure exhibiting C12/m (12) space-group symmetry. The crystallite size (373 and 176.5 Å), residual strain (6.96 x10-4 lin-2 m-4 and 5.34 x10-4 lin-2 m-4) and dislocation density (3.69 x1014 lin/m-2 and 2.17 x1014 lin/m-2) values have been calculated using XRD results (004), respectively. |
| Anahtar Kelimeler |
| Bildiri Türü | Tebliğ/Bildiri |
| Bildiri Alt Türü | Özet Metin Olarak Yayınlanan Tebliğ (Uluslararası Kongre/Sempozyum) |
| Bildiri Niteliği | Alanında Hakemli Uluslararası Kongre/Sempozyum |
| Bildiri Dili | İngilizce |
| Kongre Adı | İnternational congress on semiconductor materials and devices (ICSMD-2017) |
| Kongre Tarihi | 17-08-2017 / |
| Basıldığı Ülke | Türkiye |
| Basıldığı Şehir | Konya |
