| Yazarlar |
Dr. Öğr. Üyesi Fatemeh MOLLAAMIN
Kastamonu Üniversitesi |
Majid Monajjemi
|
|
Hossein Sakhaeinia
|
| Özet |
| Abstract: Nanotechnology is presently dealt with development in the process of becoming an indispensable phenomenon in the engineering and scientific fields. In this work, it has been proved that the (8, 0) zig-zag GaN, GaP, GaAs, InN, InP, and InAs nanotubes can act as semiconductors. For historical reasons, normal mode analysis was originally developed for describing the vibrational spectra of molecules. A very useful approach in the analysis of normal modes is to turn attention away from individual modes and towards the types of motion in the nanotube that one would like to analyze. By calculation of the normal modes using the U matrix, it is possible to get the F matrix from the multiplication of frequency to the U matrix. In this work a complete set of the linear combinations and their normalization coefficients are achieved. The fact that for zigzag tubes, the IR-active modes are different in the (8, 0) zig-zag GaN, GaP, GaAs, InN, InP, and InAs nanotubes and is due to the reduced symmetry for those compounds. In this Letter, a simple yet accurate computational frequency normal mode was derived for estimating the nanotubes that are corresponding with some behavior of them. |
| Anahtar Kelimeler |
| GaAs | GaN | GaP | InAs | InN | InP | semiconductor nanotubes | symmetry | vibration modes |
| Makale Türü | Özgün Makale |
| Makale Alt Türü | SCOPUS dergilerinde yayımlanan tam makale |
| Dergi Adı | Russian Journal of Physical Chemistry A |
| Dergi ISSN | 0036-0244 |
| Dergi Tarandığı Indeksler | |
| Makale Dili | İngilizce |
| Basım Tarihi | 05-2022 |
| Cilt No | 96 |
| Sayı | 5 |
| Sayfalar | 1051 / 1061 |
| Doi Numarası | 10.1134/S0036024422050090 |
| Atıf Sayıları | |
| SCOPUS | 2 |
