Nano-metallic Semiconductor towards the Vibrational Analysis and Harmonic Linear Combination
Yazarlar (3)
Dr. Öğr. Üyesi Fatemeh MOLLAAMIN Kastamonu Üniversitesi, Türkiye
Prof. Dr. Majıd MONAJJEMI Kastamonu Üniversitesi, Türkiye
Hossein Sakhaeinia
Islamic Azad University, Central Tehran Branch, İran
Islamic Azad University, Central Tehran Branch, İran
| Makale Türü | Özgün Makale (SCOPUS dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Russian Journal of Physical Chemistry A | ||
| Dergi ISSN | 0036-0244 Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | |||
| Makale Dili | İngilizce | Basım Tarihi | 05-2022 |
| Cilt / Sayı / Sayfa | 96 / 5 / 1051–1061 | DOI | 10.1134/S0036024422050090 |
| Makale Linki | https://link.springer.com/article/10.1134/S0036024422050090 | ||
| UAK Araştırma Alanları |
Fen Bilimleri ve Matematik
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| Özet |
| Nanotechnology is presently dealt with development in the process of becoming an indispensable phenomenon in the engineering and scientific fields. In this work, it has been proved that the (8, 0) zig-zag GaN, GaP, GaAs, InN, InP, and InAs nanotubes can act as semiconductors. For historical reasons, normal mode analysis was originally developed for describing the vibrational spectra of molecules. A very useful approach in the analysis of normal modes is to turn attention away from individual modes and towards the types of motion in the nanotube that one would like to analyze. By calculation of the normal modes using the U matrix, it is possible to get the F matrix from the multiplication of frequency to the U matrix. In this work a complete set of the linear combinations and their normalization coefficients are achieved. The fact that for zigzag tubes, the IR-active modes are different in the (8, 0) zig-zag GaN, GaP … |
| Anahtar Kelimeler |
| GaAs | GaN | GaP | InAs | InN | InP | semiconductor nanotubes | symmetry | vibration modes |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Scopus | 2 |
| Google Scholar | 2 |