| Yazarlar |
Dr. Öğr. Üyesi Fatemeh MOLLAAMIN
Kastamonu Üniversitesi, Türkiye |
| Özet |
| Electronic properties study of nanostructure represents one of the most vibrant fields of condensed matter physics. We derived vibration modes of some molecules by comparison the spectroscopy of optimized force field for GaN, GaP, GaAs, InN, InP and InAs semiconductors. Using the group theory and the state of projection operators, a systematic method for getting the vibration model of the zigzag single-walled GaN, GaP, GaAs, InN, InP and InAs nanotubes with (8, 0) structure was illustrated. We exhibited the vibrations in these nanotubes by the calculation and combination via their normalization coefficients of (8, 0) nanotube in C6 V point group. The access of the semi empirical potential for the vibrons is the capability to apply the potential to GaN, GaP, GaAs, InN, InP and InAs semiconductors. This is motivated that a compound will be right to the existence of different frequencies. Vibrational normal mode analysis justifies all possible motions around a stable equilibrium state by vibrational frequency. |
| Anahtar Kelimeler |
| GaAs | GaN | GaP | InAs | InN | InP | Semiconductor nanotubes | Symmetry | Vibration modes |
| Makale Türü | Özgün Makale |
| Makale Alt Türü | SCOPUS dergilerinde yayımlanan tam makale |
| Dergi Adı | Journal of Computational and Theoretical Nanoscience |
| Dergi ISSN | 1546-1955 |
| Dergi Tarandığı Indeksler | SCI-Expanded |
| Makale Dili | İngilizce |
| Basım Tarihi | 01-2015 |
| Cilt No | 12 |
| Sayı | 6 |
| Sayfalar | 1030 / 1039 |
| Doi Numarası | 10.1166/jctn.2015.3846 |
| Makale Linki | http://dx.doi.org/10.1166/jctn.2015.3846 |
| Atıf Sayıları | |
| WoS | 41 |
| SCOPUS | 83 |
| Google Scholar | 62 |
