| Yazarlar |
Ahmed Ali Alarabi
Kastamonu University, Turkey |
Doç. Dr. Osman ÇİÇEK
Kastamonu Üniversitesi, Türkiye |
|
Hasan Makara
Kastamonu University, Turkey |
|
Fatih Ünal
Giresun Üniversitesi, Turkey |
Öğr. Gör. Dr. Merve ZURNACI
Kastamonu Üniversitesi, Türkiye |
|
Şemsettin Altındal
Gazi Üniversitesi, Turkey |
| Özet |
| In this paper, we present a comprehensive comparison study between p-n and p-i-n vertical diodes employing diverse heterojunction configurations under dark conditions. The diodes are fabricated utilizing p-PMItz as the organic semiconductor layer interfacing with different inorganic substrates, including n-Si (n-type silicon), n-4HSiC (n-type 4H silicon carbide), and incorporating an intrinsic SiO2 (silicon dioxide) layer in the p-PMItz/i-SiO2/n++-Si configuration. The current–voltage and dielectric characteristics are analyzed to discern the performance discrepancies among these diode configurations. The influence of heterojunction interfaces and band alignments on device behavior is investigated, shedding light on the charge transport mechanisms within these structures. Our findings reveal distinct trends in device characteristics for p-n and p-i-n diodes, highlighting the significance of heterojunction design in optimizing device performance. This comparative analysis offers valuable insights for the development of efficient organic–inorganic hybrid diodes tailored for various optoelectronic applications. |
| Anahtar Kelimeler |
| Makale Türü | Özgün Makale |
| Makale Alt Türü | SSCI, AHCI, SCI, SCI-Exp dergilerinde yayımlanan tam makale |
| Dergi Adı | Journal of Materials Science: Materials in Electronics |
| Dergi ISSN | 0957-4522 |
| Dergi Grubu | Q2 |
| Makale Dili | İngilizce |
| Basım Tarihi | 05-2024 |
| Cilt No | 35 |
| Sayı | 14 |
| Doi Numarası | 10.1007/s10854-024-12707-0 |
| Atıf Sayıları | |
| SCOPUS | 3 |
| Google Scholar | 3 |
