Comparison of p-n and p-i-n vertical diodes based on p-PMItz/n-Si, p-PMItz/n-4HSiC and p-PMItz/i-SiO2/n-Si heterojunctions
  
Yazarlar (6)
Ahmed Ali Alarabi Kastamonu Üniversitesi, Türkiye
Doç. Dr. Osman ÇİÇEK Kastamonu Üniversitesi, Türkiye
Hasan Makara Kastamonu Üniversitesi, Türkiye
Öğr. Gör. Dr. Merve ZURNACI Kastamonu Üniversitesi, Türkiye
Öğr. Gör. Dr. Merve ZURNACI Kastamonu Üniversitesi, Türkiye
Şemsettin Altındal Gazi Üniversitesi, Türkiye
Makale Türü Açık Erişim Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
Dergi Adı JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (Q2)
Dergi ISSN 0957-4522 Wos Dergi Scopus Dergi
Dergi Tarandığı Indeksler
Makale Dili İngilizce Basım Tarihi 05-2024
Cilt / Sayı / Sayfa 35 / 14 / – DOI 10.1007/s10854-024-12707-0
Makale Linki https://link.springer.com/content/pdf/10.1007/s10854-024-12707-0.pdf
Özet
In this paper, we present a comprehensive comparison study between p-n and p-i-n vertical diodes employing diverse heterojunction configurations under dark conditions. The diodes are fabricated utilizing p-PMItz as the organic semiconductor layer interfacing with different inorganic substrates, including n-Si (n-type silicon), n-4HSiC (n-type 4H silicon carbide), and incorporating an intrinsic SiO2 (silicon dioxide) layer in the p-PMItz/i-SiO2/n++-Si configuration. The current--voltage and dielectric characteristics are analyzed to discern the performance discrepancies among these diode configurations. The influence of heterojunction interfaces and band alignments on device behavior is investigated, shedding light on the charge transport mechanisms within these structures. Our findings reveal distinct trends in device characteristics for p-n and p-i-n diodes, highlighting the significance of heterojunction design in optimizing device performance. This comparative analysis offers valuable insights for the development of efficient organic--inorganic hybrid diodes tailored for various optoelectronic applications.
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