Chemical precursor-dependent dual effect of doping on the gas-sensing performance of metal oxide semiconducting materials
Yazarlar (4)
Dr. Öğr. Üyesi Ahmad Ajjaq Gazi Üniversitesi, Türkiye
Fatih Bulut Sinop Üniversitesi, Türkiye
Prof. Dr. Özgür ÖZTÜRK Kastamonu Üniversitesi, Türkiye
Prof. Dr. Selim Acar Gazi Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Sensors and Actuators B Chemical (Q1) | ||
| Dergi ISSN | 0925-4005 Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 12-2024 |
| Cilt / Sayı / Sayfa | 420 / 1 / 136501–0 | DOI | 10.1016/j.snb.2024.136501 |
| Makale Linki | https://doi.org/10.1016/j.snb.2024.136501 | ||
| Özet |
| In this study, we report a chemical precursor-dependent dual effect of doping on the gas-sensing performance of metal oxide semiconducting materials. Our findings challenge the conventional notion that optimal doping consistently enhances gas-sensing properties. Acetate and nitrate salts were used as chemical precursors, lanthanum (La) was used as a dopant, and ZnO was used as a semiconducting material. All materials were synthesized under identical conditions by a two-step process involving dip coating and hydrothermal methods. Gas-sensing results demonstrated an improvement in the performance of the acetate-based doped film and a decline in that of the nitrate-based doped film compared to their respective pure counterparts. Among the produced sensors, 1 wt% La-doped ZnO sensor produced by the acetate precursor proved to be convenient for usages in real markets. It showed superior … |
| Anahtar Kelimeler |
| Doping | Lanthanum | NH3 gas sensor | p-n shift | Precursor | ZnO |
Science Direct
Chemical precursor-dependent dual effect of doping on the gas-sensing performance of metal oxide semiconducting materials
| Atıf Sayıları | |
| Scopus | 14 |
| Google Scholar | 16 |