A Review: Breakdown Voltage Enhancement of GaN Semiconductors-Based High Electron Mobility Transistors
Yazarlar (2)
Doç. Dr. Osman ÇİÇEK Kastamonu Üniversitesi, Türkiye
Yosef Badali Istanbul Ticaret Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | IEEE Transactions on Device and Materials Reliability (Q3) | ||
| Dergi ISSN | 1530-4388 Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | Türkçe | Basım Tarihi | 06-2024 |
| Cilt / Sayı / Sayfa | 24 / 2 / 275–286 | DOI | 10.1109/TDMR.2024.3379745 |
| Makale Linki | https://doi.org/10.1109/tdmr.2024.3379745 | ||
| Özet |
| Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs) are regarded as fundamental semiconductor devices for future power electronic applications. Consequently, researchers have directed their efforts toward enhancing critical parameters such as the breakdown voltage , cut-off frequency, and operating temperature. Therefore, this review article explores research endeavors concerning the enhancement of in GaN-based HEMTs. The objective is to gain insights into the key factors influencing values and to identify the constraints that govern the optimal performance of HEMTs in power devices. Additionally, this review provides an in-depth examination of select studies that introduce novel techniques for improving values. |
| Anahtar Kelimeler |
| breakdown voltage enhancement | field-plated structure | GaN | HEMTs | negative-bias temperature instability | passivation layer | wide-bandgap |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Scopus | 22 |
| Google Scholar | 28 |