Comparison of p-n and p-i-n vertical diodes based on p-PMItz/n-Si, p-PMItz/n-4HSiC and p-PMItz/i-SiO2/n-Si heterojunctions
Yazarlar (6)
Ahmed Ali Alarabi
Kastamonu Üniversitesi, Türkiye
Kastamonu Üniversitesi, Türkiye
Doç. Dr. Osman ÇİÇEK Kastamonu Üniversitesi, Türkiye
Hasan Makara Kastamonu Üniversitesi, Türkiye
Doç. Dr. Fatih Ünal Giresun Üniversitesi, Türkiye
Öğr. Gör. Dr. Merve ZURNACI Kastamonu Üniversitesi, Türkiye
Prof. Dr. Şemsettin Altındal Gazi Üniversitesi, Türkiye
| Makale Türü |
Özgün Makale
(SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
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| Dergi Adı | Journal of Materials Science Materials in Electronics (Q2) | ||
| Dergi ISSN | 0957-4522 Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | Türkçe | Basım Tarihi | 05-2024 |
| Cilt / Sayı / Sayfa | 35 / 14 / – | DOI | 10.1007/s10854-024-12707-0 |
| Makale Linki | https://doi.org/10.1007/s10854-024-12707-0 | ||
| Özet |
| In this paper, we present a comprehensive comparison study between p-n and p-i-n vertical diodes employing diverse heterojunction configurations under dark conditions. The diodes are fabricated utilizing p-PMItz as the organic semiconductor layer interfacing with different inorganic substrates, including n-Si (n-type silicon), n-4HSiC (n-type 4H silicon carbide), and incorporating an intrinsic SiO2 (silicon dioxide) layer in the p-PMItz/i-SiO2/n++-Si configuration. The current–voltage and dielectric characteristics are analyzed to discern the performance discrepancies among these diode configurations. The influence of heterojunction interfaces and band alignments on device behavior is investigated, shedding light on the charge transport mechanisms within these structures. Our findings reveal distinct trends in device characteristics for p-n and p-i-n diodes, highlighting the significance of heterojunction design in … |
| Anahtar Kelimeler |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Scopus | 6 |
| Google Scholar | 6 |