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Comparison of p-n and p-i-n vertical diodes based on p-PMItz/n-Si, p-PMItz/n-4HSiC and p-PMItz/i-SiO2/n-Si heterojunctions     
Yazarlar (6)
Ahmed Ali Alarabi
Doç. Dr. Osman ÇİÇEK Doç. Dr. Osman ÇİÇEK
Türkiye
Öğr. Gör. Hasan MAKARA Öğr. Gör. Hasan MAKARA
Türkiye
Fatih Ünal
Giresun Üniversitesi, Türkiye
Öğr. Gör. Dr. Merve ZURNACI Öğr. Gör. Dr. Merve ZURNACI
Kastamonu Üniversitesi, Türkiye
Şemsettin Altındal
Türkiye
Devamını Göster
Özet
In this paper, we present a comprehensive comparison study between p-n and p-i-n vertical diodes employing diverse heterojunction configurations under dark conditions. The diodes are fabricated utilizing p-PMItz as the organic semiconductor layer interfacing with different inorganic substrates, including n-Si (n-type silicon), n-4HSiC (n-type 4H silicon carbide), and incorporating an intrinsic SiO2 (silicon dioxide) layer in the p-PMItz/i-SiO2/n++-Si configuration. The current–voltage and dielectric characteristics are analyzed to discern the performance discrepancies among these diode configurations. The influence of heterojunction interfaces and band alignments on device behavior is investigated, shedding light on the charge transport mechanisms within these structures. Our findings reveal distinct trends in device characteristics for p-n and p-i-n diodes, highlighting the significance of heterojunction design in optimizing device performance. This comparative analysis offers valuable insights for the development of efficient organic–inorganic hybrid diodes tailored for various optoelectronic applications.
Anahtar Kelimeler
Makale Türü Özgün Makale
Makale Alt Türü SSCI, AHCI, SCI, SCI-Exp dergilerinde yayımlanan tam makale
Dergi Adı Journal of Materials Science: Materials in Electronics
Dergi ISSN 0957-4522 Wos Dergi Scopus Dergi
Dergi Tarandığı Indeksler SCI-Expanded
Dergi Grubu Q2
Makale Dili Türkçe
Basım Tarihi 05-2024
Cilt No 35
Sayı 14
Doi Numarası 10.1007/s10854-024-12707-0
Makale Linki https://doi.org/10.1007/s10854-024-12707-0