Metal-Doped Nitride-Based Nanostructures for Saving Sustainable and Clean Energy in Batteries
Yazarlar (2)
Dr. Öğr. Üyesi Fatemeh MOLLAAMIN Kastamonu Üniversitesi, Türkiye
Prof. Dr. Majıd MONAJJEMI Islamic Azad University, Central Tehran Branch, İran
| Makale Türü | Özgün Makale (ESCI dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Energy Storage | ||
| Dergi ISSN | 2578-4862 Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | ESCI, SCOPUS, Curation, Non-Essential Science Content, Reference Master, Sophia | ||
| Makale Dili | İngilizce | Basım Tarihi | 02-2025 |
| Cilt / Sayı / Sayfa | 7 / 1 / 1–14 | DOI | 10.1002/est2.70122 |
| Makale Linki | https://doi.org/10.1002/est2.70122 | ||
| UAK Araştırma Alanları |
Fiziksel Kimya
|
||
| Özet |
| The hypothesis of the energy adsorption phenomenon was confirmed by density distributions of CDD, TDOS, and LOL for GaN and ternary alloys of AlGaN and InGaN. Based on TDOS, the excessive growth technique on doping manganese is a potential approach to designing high‐efficiency hybrid semipolar gallium nitride–based devices in a long wavelength zone. A vaster jointed area engaged by an isosurface map for Mn doping GaN, AlGaN, and InGaN toward formation of nanocomposites of Mn@GaN–H, Mn@AlGaN–H, and Mn@InGaN–H after hydrogen adsorption due to labeling atoms of N(4), Mn(5), and H (18), respectively. Therefore, it can be considered that manganese in the functionalized Mn@GaN, Mn@AlGaN, or Mn@InGaN might have more impressive sensitivity for admitting the electrons in the status of hydrogen adsorption. Furthermore, Mn@GaN, Mn@AlGaN, or Mn@InGaN are potentially … |
| Anahtar Kelimeler |
| aluminum gallium nitride | batteries | energy storage | first-principles study | hydrogen adsorption | indium gallium nitride |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Web of Science | 9 |
| Scopus | 9 |
| Google Scholar | 10 |