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Possibility of the application of Si5O10--Ge5O10 for increasing H-adsorption towards the energy storage in transistors rather than Li-ion batteries  
Yazarlar (1)
Dr. Öğr. Üyesi Fatemeh MOLLAAMIN Dr. Öğr. Üyesi Fatemeh MOLLAAMIN
Türkiye
Devamını Göster
Özet
A comprehensive investigation on hydrogen grabbing via Si5O10--Ge5O10 was carried out including using density functional theory computations. The data showed that when silicon was replaced with germanium, the hydrogen-grabbing energy was ameliorated. The electromagnetic and thermodynamic properties of Si5O10--Ge5O10 and Li2(Si 5O 10--Ge5O 10) nanoclusters were evaluated. The fluctuation in charge density values demonstrated that electronic densities were mainly located in the boundary of adsorbate/adsorbent atoms during adsorption. Therefore, it can be concluded that the Si5O10--Ge5O10 nanocluster might be an appropriate candidate for hydrogen storage in transistors. Lithium has an advantage over Si/Ge for possessing higher electron-and-hole motion, which allows lithium instruments to operate at higher frequencies than Si/Ge instruments.
Anahtar Kelimeler
DFT | hydrogen storage | Li (Si O --Ge O ) 2 5 10 5 10 | lithium battery | Si O --Ge O 5 10 5 10
Makale Türü Özgün Makale
Makale Alt Türü SCOPUS dergilerinde yayımlanan tam makale
Dergi Adı Clean Energy Science and Technology
Dergi ISSN 2972-4910
Dergi Tarandığı Indeksler
Makale Dili İngilizce
Basım Tarihi 03-2025
Cilt No 3
Sayı 1
Sayfalar 286 / 0
Doi Numarası 10.18686/cest286
Makale Linki https://cae.usp-pl.com/index.php/cest/article/view/286