Possibility of the application of Si5O10--Ge5O10 for increasing H-adsorption towards the energy storage in transistors rather than Li-ion batteries
Yazarlar (1)
Dr. Öğr. Üyesi Fatemeh MOLLAAMIN Kastamonu Üniversitesi, Türkiye
Makale Türü Açık Erişim Özgün Makale (SCOPUS dergilerinde yayınlanan tam makale)
Dergi Adı Clean Energy Science and Technology
Dergi ISSN 2972-4910 Scopus Dergi
Dergi Tarandığı Indeksler
Makale Dili İngilizce Basım Tarihi 03-2025
Cilt / Sayı / Sayfa 3 / 1 / 286–0 DOI 10.18686/cest286
Makale Linki https://cae.usp-pl.com/index.php/cest/article/view/286
UAK Araştırma Alanları
Fiziksel Kimya Nanoteknoloji
Özet
A comprehensive investigation on hydrogen grabbing via Si5O10–Ge5O10 was carried out including using density functional theory computations. The data showed that when silicon was replaced with germanium, the hydrogen-grabbing energy was ameliorated. The electromagnetic and thermodynamic properties of Si5O10–Ge5O10 and Li2 (Si5O10–Ge5O10) nanoclusters were evaluated. The fluctuation in charge density values demonstrated that electronic densities were mainly located in the boundary of adsorbate/adsorbent atoms during adsorption. Therefore, it can be concluded that the Si5O10–Ge5O10 nanocluster might be an appropriate candidate for hydrogen storage in transistors. Lithium has an advantage over Si/Ge for possessing higher electron-and-hole motion, which allows lithium instruments to operate at higher frequencies than Si/Ge instruments.
Anahtar Kelimeler
DFT | hydrogen storage | Li2(Si5O10–Ge5O10) | lithium battery | Si5O10–Ge5O10