Enhanced sensing capabilities of UV–visible p-n and p-i-n photodiodes using unique layer and contact configurations
Yazarlar (6)
Ahmed Ali Alarabi
Kastamonu Üniversitesi, Türkiye
Doç. Dr. Osman ÇİÇEK Kastamonu Üniversitesi, Türkiye
Hasan Makara Kastamonu Üniversitesi, Türkiye
Doç. Dr. Fatih Ünal Giresun Üniversitesi, Türkiye
Öğr. Gör. Dr. Merve ZURNACI Kastamonu Üniversitesi, Türkiye
Prof. Dr. Şemsettin Altındal Gazi Üniversitesi, Türkiye
Makale Türü Açık Erişim Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
Dergi Adı Engineering Science and Technology an International Journal (Q1)
Dergi ISSN 2215-0986 Wos Dergi Scopus Dergi
Dergi Tarandığı Indeksler SCI-Expanded
Makale Dili Türkçe Basım Tarihi 02-2025
Cilt / Sayı / Sayfa 62 / 1 / – DOI 10.1016/j.jestch.2025.101975
Makale Linki https://doi.org/10.1016/j.jestch.2025.101975
Özet
This paper focuses on the ultraviolet–visible (UV–vis) light response of the p-n and p-i-n vertical self-powered photodiodes (PDs) based on p-PMItz/n-Si, p-PMItz/n-4HSiC and p-PMItz/i-SiO2/n-Si Heterojunctions. The PDs, referred to as Device A-B-C-D-E and F according to the modified structures, were produced to increase the sensing capacity using distinct anode contacts. The basic fundamental parameters were recorded using the I-V data of PDs with thermionic emission theory (TE) and Ohm’s law. The results showed that, in line with the literature, the potential barrier height (ФBo) decreased, and the ideality factor (n) increased with increasing illumination intensity. Additionally, the voltage-dependent series resistances (Rs) of PDs in the dark and under different UV–vis light intensities were determined using Ohm’s laws. It was recorded that Rs decreased as light intensity increased. On the other hand, the …
Anahtar Kelimeler
Electronic Properties | Organic semiconductor | Photodiodes | Photosensitivity | Self-powered mode