Doping Effects in Ternary Aluminum Gallium Nitride Hetero-Cluster Towards High-Electron-Mobility Transistors for Hydrogen Sensing: A Density Functional Theory Study and Energy-Saving
Yazarlar (2)
Dr. Öğr. Üyesi Fatemeh MOLLAAMIN Kastamonu Üniversitesi, Türkiye
Prof. Dr. Majıd MONAJJEMI Islamic Azad University, Central Tehran Branch, İran
| Makale Türü | Özgün Makale (SCOPUS dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Russian Journal of Physical Chemistry B | ||
| Dergi ISSN | 1990-7931 Dergi Bilgileri (2025) | ||
| Dergi Tarandığı Indeksler | SCI-Exp, SCOPUS, CCR Database, Chemistry Server Reaction Center, Curation, Current Contents Physical Chemical & Earth Sciences, Essential Science Indicators, Reaction Citation Index, Reference Master, Sophia | ||
| Makale Dili | İngilizce | Basım Tarihi | 01-2025 |
| Kabul Tarihi | 20-09-2024 | Yayınlanma Tarihi | 01-01-2025 |
| Cilt / Sayı / Sayfa | 19 / 1 / 236–254 | DOI | 10.1134/S1990793124701689 |
| Makale Linki | https://link.springer.com/article/10.1134/S1990793124701689 | ||
| UAK Araştırma Alanları |
Fen Bilimleri ve Matematik
|
||
| Özet |
| The nitrogen-polar AlGaN structure is expected to have higher carrier density when it is doped with semiconductor atoms of silicon (Si) or germanium (Ge) and noble metals of palladium (Pd) or platinum (Pt). So, the metal-polar AlGaN electronic devices offer various advantages, such as high breakdown voltage and high-temperature operation. A comprehensive investigation on hydrogen grabbing towards formation of hetero-clusters of AlGaN–H, Si–AlGaN–H, Ge–AlGaN–H, Pd–AlGaN–H, Pt–AlGaN–H was carried out using DFT computations at the CAM–B3LYP–D3/6-311+G(d, p) level of theory. The notable fragile signal intensity close to the parallel edge of the nanocluster sample might be owing to silicon or germanium binding induced non-spherical distribution of Si–AlGaN or Ge–AlGaN hetero-clusters. However, a considerable deviation exists from doping atoms of palladium or platinum as electron acceptors … |
| Anahtar Kelimeler |
| aluminum gallium nitride | germanium | palladium | platinum | silicon | transistor, energy storage |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Web of Science | 2 |
| Scopus | 2 |
| Google Scholar | 3 |