Stating the Progress of Mn-Based Nanohybrid Materials Containing GaN/AlGaN/InGaN Towards Remarkable Improvement in Hydrogen Storage
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Dr. Öğr. Üyesi Fatemeh MOLLAAMIN Kastamonu Üniversitesi, Türkiye
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Özgün Makale
(SCOPUS dergilerinde yayınlanan tam makale)
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| Dergi Adı | Nanosistemi Nanomateriali Nanotehnologii | ||
| Dergi ISSN | 1816-5230 Dergi Bilgileri (2025) | ||
| Dergi Tarandığı Indeksler | SCOPUS | ||
| Makale Dili | İngilizce | Basım Tarihi | 01-2025 |
| Kabul Tarihi | – | Yayınlanma Tarihi | 01-03-2025 |
| Cilt / Sayı / Sayfa | 23 / 1 / 37–60 | DOI | 10.15407/nnn.23.01.0037 |
| Makale Linki | https://search.ebscohost.com/login.aspx?direct=true&profile=ehost&scope=site&authtype=crawler&jrnl=18165230&AN=186349536&h=rwyf2712A1NlK8bnIOFMI12k4JNGQh7yVIMa%2Fq4yyyPEm6SSauXyRhGszKFfJRJEoOMTyZQppJGGxaBkENp4mw%3D%3D&crl=c | ||
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Fiziksel Kimya
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| Özet |
| A comprehensive investigation on hydrogen grabbing by heteroclusters of Mn-doped GaN, AlGaN, InGaN is carried out using DFT computations at the CAM–B3LYP–D3/6–311+ G (d, p) level of theory. The notable fragile signal intensity close to the parallel edge of the nanocluster sample might be owing to manganese binding-induced non-spherical distribution of Mn@ GaN, Mn@ AlGaN or Mn@ InGaN heteroclusters. The hypothesis of the energy-adsorption phenomenon is confirmed by density distributions of CDD, TDOS/PDOS/OPDOS, and electron-localization function (ELF) for GaN and its alloys. Based on TDOS, the excessive growth technique on doping manganese is a potential approach to designing high-efficiency hybrid semi-polar gallium nitride-based devices in a long-wavelength zone. A vaster jointed area engages by an isosurface map for Mn-doping GaN, AlGaN, and InGaN towards formation of … |
| Anahtar Kelimeler |
| aluminium–gallium nitride | energy storage | first-principles study | hydrogen adsorption | indium gallium nitride | solar cells |
BM Sürdürülebilir Kalkınma Amaçları
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| Google Scholar | 1 |