Synthesis of a new 1,3,4-thiadiazole-substituted phenanthroimidazole derivative, its growth on glass/ITO as a thin film and analysis of some surface and optoelectronic properties
Yazarlar (6)
Öğr. Gör. Dr. Merve ZURNACI Kastamonu Üniversitesi, Türkiye
Fatih Ünal Giresun Üniversitesi, Türkiye
Serkan Demir Giresun Üniversitesi, Türkiye
Prof. Dr. Mahmut GÜR Kastamonu Üniversitesi, Türkiye
Prof. Dr. Nesrin ŞENER Kastamonu Üniversitesi, Türkiye
Prof. Dr. İzzet ŞENER Kastamonu Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | New Journal of Chemistry (Q2) | ||
| Dergi ISSN | 1144-0546 Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | Türkçe | Basım Tarihi | 01-2021 |
| Kabul Tarihi | 12-04-2026 | Yayınlanma Tarihi | – |
| Cilt / Sayı / Sayfa | 45 / 48 / 22678–22690 | DOI | 10.1039/D1NJ04375G |
| Makale Linki | http://dx.doi.org/10.1039/d1nj04375g | ||
| Özet |
| A new phenanthroimidazole derivative (PMItz) bearing a 1,3,4-thiadiazole moiety was prepared and deposited as a thin film on a previously prepared glass/ITO substrate via the physical vapor deposition (PVD) method. The optical and surface morphological properties of the fabricated thin film, glass/ITO/PMItz, were investigated via UV-Vis spectroscopy, atomic force microscopy (AFM) and scanning electron microscopy (SEM). Subsequently, metal/ITO/PMItz/metal (metal: In and Ag) devices were fabricated and their electrical properties were investigated. The optical measurements revealed the reasonably high optical conductivities of the thin films. The energy band gap was calculated to be 2.96 eV, the absorption coefficient was calculated to be 1.3 × 106 m−1 and the optical conductivity was calculated to be 3.14 × 1014. The typical diode characteristics of the devices were demonstrated by electrical measurements … |
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BM Sürdürülebilir Kalkınma Amaçları
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| Google Scholar | 25 |
| Web of Science | 16 |
| Scopus | 16 |