SYNTHESIS AND INVESTIGATION OF STRUCTURAL, SURFACE MORPHOLOGICAL AND OPTICAL PROPERTIES OF InSe/PMItz HYBRID HETEROJUNCTION
Yazarlar (6)
Doç. Dr. Fatih Ünal Giresun Üniversitesi, Türkiye
Öğr. Gör. Dr. Merve ZURNACI Kastamonu Üniversitesi, Türkiye
Prof. Dr. Serkan Demir Giresun Üniversitesi, Türkiye
Prof. Dr. Mahmut GÜR Kastamonu Üniversitesi, Türkiye
Prof. Dr. Nesrin ŞENER Kastamonu Üniversitesi, Türkiye
Prof. Dr. İzzet ŞENER Kastamonu Üniversitesi, Türkiye
Makale Türü Açık Erişim Özgün Makale (Diğer hakemli uluslarası dergilerde yayınlanan tam makale)
Dergi Adı Kirklareli Universitesi Muhendislik ve Fen Bilimleri Dergisi
Dergi ISSN 2458-7494
Dergi Tarandığı Indeksler Index Copernicus, Directory of Research Journals Indexing
Makale Dili Türkçe Basım Tarihi 12-2022
Kabul Tarihi 05-12-2022 Yayınlanma Tarihi 31-12-2022
Cilt / Sayı / Sayfa 8 / 2 / 273–288 DOI 10.34186/klujes.1178165
Makale Linki http://dx.doi.org/10.34186/klujes.1178165
UAK Araştırma Alanları
Organik Kimya
Özet
On a series of annealed and unannealed InSe thin films which were formerly produced by electrochemical deposition method, organic PMItz semiconductor compound was growth by physical vapour deposition (PVD) method. Structural analyses of the films carried out by X-ray diffractometry (XRD) method revealed that glass/ITO/InSe film formed in hexagonal InSe phase while glass/ITO/InSe(annealed) film formed in monoclinic In6Se7 and orthorombic In4Se3 phases. Surface analyses of the layers forming heterojunction were conducted by atomic force microscoby (AFM) and it is observed that the layers are homogenous and have different roughness values. Optical analyses of the films demonstrated that annealing of the film result with increased absorption coefficient and reduced energy band gap. Moreover, other optical parameters of the films i.e. refractive indice(n), extinction coefficient (k), real dielectric constant(Er), imaginary dielectric constant(Ei) and optical conductivity were determined and compared within 300-1000 nm range.
Anahtar Kelimeler