The photovoltaic and photodiode properties of Au/Carmine/n-Si/Ag diode
Yazarlar (5)
Öğr. Gör. Muhammed Canhakan BODUR Erzurum Technical University, Türkiye
S. Duman
Erzurum Technical University, Türkiye
I. Orak
Bingöl Üniversitesi, Türkiye
S. Saritas
Atatürk Üniversitesi, Türkiye
O. Baris
Atatürk Üniversitesi, Türkiye
Makale Türü Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
Dergi Adı Optics and Laser Technology (Q1)
Dergi ISSN 0030-3992 Wos Dergi Scopus Dergi
Dergi Tarandığı Indeksler SCI
Makale Dili Türkçe Basım Tarihi 01-2023
Cilt / Sayı / Sayfa 162 / 1 / – DOI 10.1016/j.optlastec.2023.109251
Makale Linki http://dx.doi.org/10.1016/j.optlastec.2023.109251
UAK Araştırma Alanları
Yapay Zeka Yarı İletkenler Optik, Fotonik
Özet
In this study, carmine films were deposited on glass slides and n-Si substrates using a spin coater. The scanning electron microscope (SEM) and absorbance analyses of the deposited carmine film on glass were performed. Twenty-four (24) Au/Carmine/n-Si/Ag dots were identically fabricated, and their current–voltage (I–V) characteristics were taken at room temperature, both in the dark and under daylight. It was seen that all diodes exhibited a rectifying behavior. The ideality factor (n, IF), barrier height (Φb, BH), rectification ratio (RR), and series resistance (Rs) of each dot were determined using the thermionic emission (TE) theory and modified Norde's functions, respectively. Although the dots were prepared on the same substrate, there was a difference from one dot to the next. The n and Φb values of the 24 dots were found in the range of 1.52–2.72 and 0.76–0.85 eV in the dark, respectively. Furthermore, a high current rectification ratio of 104 was achieved for the 11 dots in the dark. The photovoltaic and photodiode properties of one (labeled as D18) of the Au/Carmine/n-Si/Ag dots under the different light intensities varied from 30 to 100 mW/cm2 at room temperature, and its capacitance–voltage (C–V) characteristics were investigated only in the dark. The D18 dot exhibited typical photodiode behavior with a fill factor (FF) value of 36.2 % and an experimental efficiency (ŋ) of 2.45 % under 30 mW/cm2 light intensity, respectively. It also has a high ON/OFF current (Ion/Ioff) ratio of 7.45x103. Because the maximum current value of the Au/Carmine/n-Si/Ag photodiode has not changed, it exhibits good stability for 12 on/off cycles. According to these experimental findings, the high-performing Au/Carmine/n-Si/Ag diode displays good photodiode behavior, and photodiodes based on the carmine thin film can be used to develop future optoelectronic devices.
Anahtar Kelimeler
Carmine | Fill factor | On/off ratio | Photodiode | Photovoltaic
Science Direct
BM Sürdürülebilir Kalkınma Amaçları
Atıf Sayıları
Scopus 14
The photovoltaic and photodiode properties of Au/Carmine/n-Si/Ag diode

Paylaş

İletişim
  • Kastamonu Üniversitesi Rektörlüğü, Kuzeykent Kampüsü, Merkez/Kastamonu
  • unis@kastamonu.edu.tr 03662801000
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