Capacitor simulation including of X-doped graphene (X = Li, Be, B) as two electrodes and (h-BN)m (m=1-4) as the insulator

Jalilian, Hamidreza; MONAJJEMI, Majıd

doi:10.7567/JJAP.54.085101

Capacitor simulation including of X-doped graphene (X = Li, Be, B) as two electrodes and (h-BN)_m (m=1-4) as the insulator

Yazarlar (2)

Hamidreza Jalilian Islamic Azad University, Science And Research Branch, İran

Prof. Dr. Majıd MONAJJEMI Islamic Azad University, Science And Research Branch, İran

Makale Türü	Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
Dergi Adı	Japanese Journal of Applied Physics (Q3)
Dergi ISSN	0021-4922 Dergi Bilgileri (2015)
Makale Dili	İngilizce	Basım Tarihi	08-2015
Cilt / Sayı / Sayfa	54 / 8 / –	DOI	10.7567/JJAP.54.085101
Makale Linki	http://www.scopus.com/inward/record.url?eid=2-s2.0-84938295752&partnerID=MN8TOARS
UAK Araştırma Alanları

Özet

Nanoscale dielectric capacitors have been widely studied due to their ability to store a high amount of energy. In this research, we have modeled one which is composed of a few dopants graphene layers including Li, Be, B (of second row in Mendeleev table) separated by an insulating medium of a few horizontal boron nitride (h-BN) layers. It has been indicated that the boron atoms are the suitable dopants for hetero-structures of the X-G/(h-BN)m/X-G capacitor compared to those from groups IA or IIA. It has been specifically studied the quantum and coulomb blocked effects of different h-BN/graphene including hetero-structures, stacks for multi dielectric properties of different (h-BN)n/graphene. We have shown that the quantum effect has appeared in small thickness of capacitor due to number of layers and this effect cannot occur in the layers more than 4 of h-BN, while the m = 3 is suitable layer for the capacitor simulation.

Anahtar Kelimeler

BM Sürdürülebilir Kalkınma Amaçları

Atıf Sayıları
Web of Science	61
Scopus	104

Capacitor simulation including of X-doped graphene (X = Li, Be, B) as two electrodes and (h-BN)_m (m=1-4) as the insulator

Dergi Adı	JAPANESE JOURNAL OF APPLIED PHYSICS
Kısa Adı	JPN J APPL PHYS
Yayıncı	IOP PUBLISHING LTD
Açık Erişim	Hayır
ISSN	0021-4922
E-ISSN	1347-4065
Wos Quartile	Q3
Scopus Quartile	Q2
Tarandığı Indeksler	SCIE , Scopus
WoS Kategoriler	PHYSICS, APPLIED
Scopus Kategoriler	ENGINEERING (MISCELLANEOUS) \| PHYSICS AND ASTRONOMY (MISCELLANEOUS)

Capacitor simulation including of X-doped graphene (X = Li, Be, B) as two electrodes and (h-BN)m (m=1-4) as the insulator

Paylaş

Capacitor simulation including of X-doped graphene (X = Li, Be, B) as two electrodes and (h-BN)_m (m=1-4) as the insulator