Capacitor simulation including of X-doped graphene (X = Li, Be, B) as two electrodes and (h-BN)m (m=1-4) as the insulator
Yazarlar (2)
Hamidreza Jalilian Islamic Azad University, Science And Research Branch, İran
Prof. Dr. Majıd MONAJJEMI Islamic Azad University, Science And Research Branch, İran
Makale Türü Özgün Makale (ESCI dergilerinde yayınlanan tam makale)
Dergi Adı Japanese Journal of Applied Physics
Dergi ISSN 0021-4922 Wos Dergi Scopus Dergi
Makale Dili İngilizce Basım Tarihi 08-2015
Cilt / Sayı / Sayfa 54 / 8 / – DOI 10.7567/JJAP.54.085101
Makale Linki http://www.scopus.com/inward/record.url?eid=2-s2.0-84938295752&partnerID=MN8TOARS
Özet
Nanoscale dielectric capacitors have been widely studied due to their ability to store a high amount of energy. In this research, we have modeled one which is composed of a few dopants graphene layers including Li, Be, B (of second row in Mendeleev table) separated by an insulating medium of a few horizontal boron nitride (h-BN) layers. It has been indicated that the boron atoms are the suitable dopants for hetero-structures of the X-G/(h-BN)m/X-G capacitor compared to those from groups IA or IIA. It has been specifically studied the quantum and coulomb blocked effects of different h-BN/graphene including hetero-structures, stacks for multi dielectric properties of different (h-BN)n/graphene. We have shown that the quantum effect has appeared in small thickness of capacitor due to number of layers and this effect cannot occur in the layers more than 4 of h-BN, while the m = 3 is suitable layer for the capacitor simulation.
Anahtar Kelimeler
BM Sürdürülebilir Kalkınma Amaçları
Atıf Sayıları
Web of Science 61
Scopus 102
Capacitor simulation including of X-doped graphene (X = Li, Be, B) as two electrodes and (h-BN)m (m=1-4) as the insulator

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