X-doped graphene (X = N, F) as two electrodes and (h-BN)m (m = 2-5) as the insulator: A nano capacitor
Yazarlar (1)
Prof. Dr. Majıd MONAJJEMI Islamic Azad University, Science And Research Branch, İran
Makale Türü Özgün Makale (Uluslararası alan indekslerindeki dergilerde yayınlanan tam makale)
Dergi Adı Journal of Computational and Theoretical Nanoscience
Dergi ISSN 1546-1955 Wos Dergi Scopus Dergi
Dergi Tarandığı Indeksler
Makale Dili İngilizce Basım Tarihi 01-2015
Cilt / Sayı / Sayfa 12 / 12 / 5395–5401 DOI 10.1166/jctn.2015.4533
Makale Linki http://www.scopus.com/inward/record.url?eid=2-s2.0-84981272185&partnerID=MN8TOARS
Özet
Nanoscale dielectric capacitors have been widely studied due to their ability to store a high amount of energy. In this research, we have modeled one which is composed of a few dopants graphene layers including N, F (of second row in Mendeleev table) separated by an insulating medium of a few h-BN layers. It has been indicated that the N, F atoms are the suitable dopants for hetero-structures of the X-G/(h-BN)m/X-G capacitor compared to those third row in Mendeleev table. It has been specifically studied the quantum and coulomb blocked effects of different h-BN/graphene including hetero-structures, stacks for multi dielectric properties of different (h-BN)n/graphene. We have shown that the Quantum effect has appeared in small thickness of capacitor due to number of layers and this effect cannot occur in the layers more than 5 of h-BN, while the m = 3 is suitable layer for the capacitor simulation.
Anahtar Kelimeler
Boron nitride sheet | Coulomb blockade | Graphene electrode | Nanoscale dielectric capacitors
BM Sürdürülebilir Kalkınma Amaçları
Atıf Sayıları
Scopus 7
X-doped graphene (X = N, F) as two electrodes and (h-BN)m (m = 2-5) as the insulator: A nano capacitor

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