Solar light performances of n-ZnO nanorods/p-Si-based photodetectors under high illumination intensity
Yazarlar (5)
Prof. Dr. Özgür ÖZTÜRK Kastamonu Üniversitesi, Türkiye
Öğr. Gör. Bilge Merve CANDAN KURNAZ Kastamonu Üniversitesi, Türkiye
Öğr. Gör. Dr. Sedat KURNAZ Kastamonu Üniversitesi, Türkiye
Doç. Dr. Osman ÇİÇEK Kastamonu Üniversitesi, Türkiye
Prof. Dr. Ahmet Tolga TAŞÇI Kastamonu Üniversitesi, Türkiye
| Makale Türü |
Özgün Makale
(SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
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| Dergi Adı | Journal of Materials Science Materials in Electronics (Q2) | ||
| Dergi ISSN | 0957-4522 Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 06-2022 |
| Kabul Tarihi | 16-05-2022 | Yayınlanma Tarihi | 01-06-2022 |
| Cilt / Sayı / Sayfa | 33 / 18 / 15222–15231 | DOI | 10.1007/s10854-022-08440-1 |
| Makale Linki | http://dx.doi.org/10.1007/s10854-022-08440-1 | ||
| Özet |
| We present ZnO nanorod/ZnO thin film structures synthesized at different molarities and growth times using a hydrothermal method, exhibiting uniquely solar sensing characteristics. ZnO thin film was deposited on p-Si(100) substrate by using RF sputter. ZnO nanorods with different molarities (10 and 20 mM) and growth times (2, 3, and 4 h) were fabricated at 90 °C by using the hydrothermal method on the n-ZnO/p-Si. The surface texture was also examined by scanning electron microscopy. The diameter of ZnO NRs was in the range of 62–119 nm. The current–time measurements were done under solar light illumination intensity (50 and 100 mW/cm2) and forward bias voltage (1, 5, and 10 V). Decay time (τd), rise time (τr), detectivity (D*), responsivity (R), and sensitivity (S) parameters were calculated. Samples produced at 2 h and 3 h in 10 mM solution performed best due to low τd, τr, and high D*, R, S. Especially … |
| Anahtar Kelimeler |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Web of Science | 3 |
| Scopus | 3 |
| Google Scholar | 4 |