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Leakage and field emission in side-gate graphene field effect transistors         
Yazarlar (9)
A. Di Bartolomeo
Università Degli Studi Di Salerno, İtalya
F. Giubileo
Cnr - Superconducting And Other Innovative Materials And Devices İnstitute, Salerno, İtalya
L. Iemmo
Università Degli Studi Di Salerno, İtalya
F. Romeo
Università Degli Studi Di Salerno, İtalya
S. Russo
University Of Exeter, İngiltere
Dr. Öğr. Üyesi Selim ÜNAL Dr. Öğr. Üyesi Selim ÜNAL
Türkiye
M. Passacantando
Università Degli Studi Dell'aquila, İtalya
V. Grossi
Università Degli Studi Dell'aquila, İtalya
A. M. Cucolo
Università Degli Studi Di Salerno, İtalya
Devamını Göster
Özet
We fabricate planar graphene field-effect transistors with self-aligned side-gate at 100 nm from the 500 nm wide graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1 V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO2/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO2 up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at higher voltages. We report a field-emission current density as high as 1 μA/μm between graphene flakes. These findings are important for the miniaturization of atomically thin devices.
Anahtar Kelimeler
Makale Türü Özgün Makale
Makale Alt Türü SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale
Dergi Adı Applied Physics Letters
Dergi ISSN 0003-6951 Wos Dergi Scopus Dergi
Dergi Tarandığı Indeksler SCI
Makale Dili İngilizce
Basım Tarihi 01-2016
Cilt No 109
Sayı 2
Doi Numarası 10.1063/1.4958618
Makale Linki http://dx.doi.org/10.1063/1.4958618