Leakage and field emission in side-gate graphene field effect transistors
Yazarlar (9)
A. Di Bartolomeo Università Degli Studi Di Salerno, İtalya
F. Giubileo Cnr - Superconducting And Other Innovative Materials And Devices İnstitute, Salerno, İtalya
L. Iemmo Università Degli Studi Di Salerno, İtalya
F. Romeo Università Degli Studi Di Salerno, İtalya
S. Russo
University Of Exeter, İngiltere
University Of Exeter, İngiltere
Dr. Öğr. Üyesi Selim ÜNAL University Of Exeter, İngiltere
M. Passacantando Università Degli Studi Dell'aquila, İtalya
V. Grossi Università Degli Studi Dell'aquila, İtalya
A. M. Cucolo Università Degli Studi Di Salerno, İtalya
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Applied Physics Letters | ||
| Dergi ISSN | 0003-6951 Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI | ||
| Makale Dili | İngilizce | Basım Tarihi | 01-2016 |
| Cilt / Sayı / Sayfa | 109 / 2 / 112–112 | DOI | 10.1063/1.4958618 |
| Makale Linki | http://dx.doi.org/10.1063/1.4958618 | ||
| Özet |
| We fabricate planar graphene field-effect transistors with self-aligned side-gate at 100 nm from the 500 nm wide graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1 V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO 2/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO 2 up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at higher voltages. We report a field-emission current density as high as 1 μA/μm between graphene flakes. These findings are important for the miniaturization of atomically thin devices. |
| Anahtar Kelimeler |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Web of Science | 84 |
| Scopus | 89 |
| Google Scholar | 107 |