| Yazarlar |
A. Di Bartolomeo
|
|
F. Giubileo
|
|
L. Iemmo
|
|
F. Romeo
|
|
S. Russo
|
|
Dr. Öğr. Üyesi Selim ÜNAL
Türkiye |
|
M. Passacantando
|
|
V. Grossi
|
|
A. M. Cucolo
|
| Özet |
| We fabricate planar graphene field-effect transistors with self-aligned side-gate at 100 nm from the 500 nm wide graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1 V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO2/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO2 up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at higher voltages. We report a field-emission current density as high as 1 μA/μm between graphene flakes. These findings are important for the miniaturization of atomically thin devices. |
| Anahtar Kelimeler |
| Makale Türü | Özgün Makale |
| Makale Alt Türü | SSCI, AHCI, SCI, SCI-Exp dergilerinde yayımlanan tam makale |
| Dergi Adı | Applied Physics Letters |
| Dergi ISSN | 0003-6951 |
| Dergi Tarandığı Indeksler | SCI |
| Makale Dili | İngilizce |
| Basım Tarihi | 01-2016 |
| Cilt No | 109 |
| Sayı | 2 |
| Doi Numarası | 10.1063/1.4958618 |
| Makale Linki | http://dx.doi.org/10.1063/1.4958618 |
| Atıf Sayıları | |
| SCOPUS | 86 |
| Google Scholar | 97 |
| Google Scholar | 97 |
