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Structural and Electrical Properties of Al/ZnONRs/ZnO/p-Si/Al Type MOS Diodes    
Yazarlar (4)
Prof. Dr. Ahmet Tolga TAŞÇI Prof. Dr. Ahmet Tolga TAŞÇI
Türkiye
Merve Kızıldeniz
Öğr. Gör. Dr. Sedat KURNAZ Öğr. Gör. Dr. Sedat KURNAZ
Türkiye
Doç. Dr. Osman ÇİÇEK Doç. Dr. Osman ÇİÇEK
Kastamonu Üniversitesi, Türkiye
Devamını Göster
Özet
In this study, Al/ZnO NRs/ZnO/p-Si/Al type MOS diodes with ZnO nanorods, synthesized by hydrothermal method, were fabricated. The fabricated devices were named as MD 10-2, MD 10-4, MD 20-2, MD 20-3 and MD 20-4 according to their molar concentration (mM) and the time they were kept in hydrothermal solution (hours). They were produced in different concentrations and times to optimize the electrical properties of the device. The basic electrical parameters of the fabricated structures were investigated by capacitance-voltage (CV) and conductance-voltage (G/ω-V) measurements at a frequency of 10 kHz at room temperature. The C-2-V curves obtained from these measurements were used to calculate parameters such as the breakdown voltage (V o), zero-supply potential barrier height (Φ Bo), depletion layer width (W D). Looking at the CV curves for all structures, it was clearly seen that the aggregation, depletion and reversal regions were formed on the MOS-type diodes. In addition, the effect of interfacial states and series resistance (Rs) were analyzed from the curves. At the same time, the voltage dependent Rs values of MOS type diodes were calculated using the admittance method. According to the calculated data, it was observed that the lower series resistance value was found in MD 10-2 with low molar concentration and time. For this reason, it was said that the effect of interfacial states decreased in the MD 10-2 device compared to other structures. Finally, the diameter and arrangement of the nanorods were examined by scanning electron microscopy (SEM) of the MOS type diodes. SEM images showed the formation of well …
Anahtar Kelimeler
Makale Türü Özgün Makale
Makale Alt Türü Diğer hakemli uluslarası dergilerde yayınlanan tam makale
Dergi Adı Journal of Advanced Applied Sciences
Dergi ISSN 2979-9759
Dergi Tarandığı Indeksler crossref, scilit, international copernicus
Makale Dili Türkçe
Basım Tarihi 06-2023
Cilt No 2
Doi Numarası 10.29329/jaasci.2023.562.03
Makale Linki http://dx.doi.org/10.29329/jaasci.2023.562.03
BM Sürdürülebilir Kalkınma Amaçları
Atıf Sayıları
Structural and Electrical Properties of Al/ZnONRs/ZnO/p-Si/Al Type MOS Diodes

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