Comparative Investigation on the Effects of Organic and Inorganic Interlayers in Au n GaAs Schottky Diodes
Yazarlar (3)
Serhat Orkun Tan Karabük Üniversitesi, Türkiye
Hüseyin Tecimer Karabük Üniversitesi, Türkiye
Doç. Dr. Osman ÇİÇEK Kastamonu Üniversitesi, Türkiye
Makale Türü Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
Dergi Adı IEEE Transactions on Electron Devices (Q2)
Dergi ISSN 0018-9383 Wos Dergi Scopus Dergi
Dergi Tarandığı Indeksler SCI
Makale Dili İngilizce Basım Tarihi 03-2017
Kabul Tarihi Yayınlanma Tarihi 01-03-2017
Cilt / Sayı / Sayfa 64 / 3 / 984–990 DOI 10.1109/TED.2016.2647380
Makale Linki http://ieeexplore.ieee.org/document/7819506/
Özet
There have been many attempts on Schottky barrier diodes (SBDs) to improve the quality of metal-semiconductor (MS) structure and control permanently the barrier height (BH) by utilizing an organic or inorganic interfacial layer instead of widely used SiO2. The organic polymer or inorganic insulator interfacial layer insertion to the M/S interface converts the structure into the metal-polymer-semiconductor (MPS) or metal-insulator-semiconductor (MIS). The reliability and performance of the MIS/MPS-type SBDs is drastically affected by the interface layer quality and also its thickness. In this paper, MS structure forms as Au/n-GaAs are consecutively used with an organic interfacial layer polyvinyl alcohol and inorganic interfacial layer zinc oxide to compare their effects on the electrical characteristics of SBDs under distinct illumination levels. Consequently, the current-voltage characteristics provide us to reveal and …
Anahtar Kelimeler
Illumination effect | interfacial layer | polymer | polyvinyl alcohol (PVA) | Schottky diode | zinc oxide (ZnO)
BM Sürdürülebilir Kalkınma Amaçları
Atıf Sayıları
Scopus 47
Google Scholar 52
Comparative Investigation on the Effects of Organic and Inorganic Interlayers in Au n GaAs Schottky Diodes

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