| Yazarlar |
Doç. Dr. Osman ÇİÇEK
Kastamonu Üniversitesi, Türkiye |
Engin Arslan
Türkiye |
|
Şemsettin Altındal
Gazi Üniversitesi, Türkiye |
|
Yosef Badalı
İstanbul Ticaret Üniversitesi, Türkiye |
|
Ekmel Özbay
Türkiye |
| Özet |
| Sensitivity (S) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the {S} values of the Ni50nm - Au100nm /Ga2O3/ p -Si vertical MOS type diode, using the measured capacitance-voltage (Cm - V) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the S value is 21.2 mV/K at 1 nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them. |
| Anahtar Kelimeler |
| Novel drive mode,sensitivity,temperature sensing,vertical metal-oxide-semiconductor (MOS) type diode |
| Makale Türü | Özgün Makale |
| Makale Alt Türü | SSCI, AHCI, SCI, SCI-Exp dergilerinde yayımlanan tam makale |
| Dergi Adı | IEEE Sensors Journal |
| Dergi ISSN | 1530-437X |
| Dergi Tarandığı Indeksler | SCI |
| Dergi Grubu | Q2 |
| Makale Dili | İngilizce |
| Basım Tarihi | 12-2022 |
| Cilt No | 22 |
| Sayı | 24 |
| Sayfalar | 23699 / 23704 |
| Doi Numarası | 10.1109/JSEN.2022.3219553 |
| Makale Linki | http://dx.doi.org/10.1109/jsen.2022.3219553 |
| Atıf Sayıları | |
| SCOPUS | 3 |
| Google Scholar | 3 |
