21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics With a Novel Drive Mode
Yazarlar (5)
Doç. Dr. Osman ÇİÇEK Kastamonu Üniversitesi, Türkiye
Engin Arslan Antalya Bilim University, Türkiye
Semsettin Altindal Gazi Üniversitesi, Türkiye
Yosef Badali Istanbul Ticaret Üniversitesi, Türkiye
Ekmel Ozbay Bilkent Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | IEEE Sensors Journal (Q2) | ||
| Dergi ISSN | 1530-437X Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI | ||
| Makale Dili | İngilizce | Basım Tarihi | 12-2022 |
| Kabul Tarihi | – | Yayınlanma Tarihi | 15-12-2022 |
| Cilt / Sayı / Sayfa | 22 / 24 / 23699–23704 | DOI | 10.1109/JSEN.2022.3219553 |
| Makale Linki | http://dx.doi.org/10.1109/jsen.2022.3219553 | ||
| Özet |
| Sensitivity ( ) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the values of the - /Ga2O3/ -Si vertical MOS type diode, using the measured capacitance–voltage ( – ) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the value is 21.2 mV/K at 1 nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them. |
| Anahtar Kelimeler |
| Novel drive mode | sensitivity | temperature sensing | vertical metal-oxide-semiconductor (MOS) type diode |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Scopus | 11 |
| Google Scholar | 11 |