Vertical CdTe:PVP/p-Si-Based Temperature Sensor by Using Aluminum Anode Schottky Contact
Yazarlar (5)
Hayriye Gokcen Cetinkaya Gazi Üniversitesi, Türkiye
Doç. Dr. Osman ÇİÇEK Kastamonu Üniversitesi, Türkiye
Semsettin Altindal Gazi Üniversitesi, Türkiye
Yosef Badali Istanbul Ticaret Üniversitesi, Türkiye
Selcuk Demirezen Amasya Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | IEEE Sensors Journal (Q2) | ||
| Dergi ISSN | 1530-437X Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI | ||
| Makale Dili | İngilizce | Basım Tarihi | 01-2022 |
| Kabul Tarihi | – | Yayınlanma Tarihi | 01-12-2022 |
| Cilt / Sayı / Sayfa | 22 / 23 / 22391–22397 | DOI | 10.1109/JSEN.2022.3212867 |
| Makale Linki | http://dx.doi.org/10.1109/jsen.2022.3212867 | ||
| Özet |
| The vertical Schottky barrier diode (SBD)-based temperature sensors with the drive modes are a significant issue with more advantageous than the on-chip sensor. The sensitivity ( ) and the current conduction mechanisms (CCMs) of the vertical cadmium telluride (CdTe):polyvinyl pyrolidone (PVP)/ -Si SBD were studied experimentally over the range of 80–340 K and compared with that of the lateral and vertical sensors. It is shown that the low and moderated voltages of the CdTe:PVP/ -Si corresponding two linear regions of the current–voltage ( – ) outputs are around 0.1–0.3 and 0.4–0.65 V, respectively. The variation of Schottky barrier height (BH; ) and ideality factor ( ) with temperature was obtained according to two linear regions. Energy dispersion of the interface traps ( ) with changing temperature is additionally analyzed quantitatively. It is concluded that the thermionic-emission (TE) theory with double-Gaussian … |
| Anahtar Kelimeler |
| Current conduction mechanisms (CCMs) | Schottky contact | temperature sensor | vertical diode |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Scopus | 25 |
| Google Scholar | 27 |