Dielectric properties, electric modulus and conductivity profiles of Al/Al2O3/p-Si type MOS capacitor in large frequency and bias interval
Yazarlar (4)
Serhat Orkun Tan Karabük Üniversitesi, Türkiye
Doç. Dr. Osman ÇİÇEK Kastamonu Üniversitesi, Türkiye
Çağrı Gökhan Türk Gazi Üniversitesi, Türkiye
Şemsettin Altındal Gazi Üniversitesi, Türkiye
Makale Türü Açık Erişim Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
Dergi Adı Engineering Science and Technology an International Journal (Q1)
Dergi ISSN 2215-0986 Wos Dergi Scopus Dergi
Dergi Tarandığı Indeksler SCI-Expanded
Makale Dili İngilizce Basım Tarihi 05-2022
Kabul Tarihi Yayınlanma Tarihi 01-03-2022
Cilt / Sayı / Sayfa 27 / 1 / 1–5 DOI 10.1016/j.jestch.2021.05.021
Makale Linki http://dx.doi.org/10.1016/j.jestch.2021.05.021
Özet
The letter reports that the impedance spectroscopy method has been performed to acquire impeccable results on the ac electric conductivity (σac), dielectric (ε′ and ε′′) and electric modulus (M' and M'') components of the Al/Al2O3/p-Si type MOS capacitor. The relevant parameters are defined with C-V-f and G/ω-V-f data between 1 kHz and 5 MHz and ± 3 V at room temperature. Both parts of dielectric constants are decreasing at high frequencies to prevent the interface dipoles from gaining enough time to return to the alternative area. Depending on the restructuring and reorganization of surface states (Nss) in the alternative field, tanδ decreases at higher frequencies. The M' values reach maximum by frequency increment in the depletion region, while M'' values shift to the forward biases depending on a certain density distribution of Nss. The σac values increase with increasing frequency in the accumulation …
Anahtar Kelimeler
Conductivity | Dielectric properties | Electric modulus | Frequency dependence | Polarization | Surface states