High Dielectric Performance of Heterojunction Structures Based on Spin-Coated Graphene-PVP Thin Film on Silicon With Gold Contacts for Organic Electronics
Yazarlar (3)
Doç. Dr. Osman ÇİÇEK Kastamonu Üniversitesi, Türkiye
Gizem Koca Kastamonu Üniversitesi, Türkiye
Şemsettin Altındal Gazi Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | IEEE Transactions on Electron Devices (Q2) | ||
| Dergi ISSN | 0018-9383 Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | Türkçe | Basım Tarihi | 12-2022 |
| Kabul Tarihi | – | Yayınlanma Tarihi | 01-01-2022 |
| Cilt / Sayı / Sayfa | 69 / 1 / 304–310 | DOI | 10.1109/TED.2021.3129722 |
| Makale Linki | http://dx.doi.org/10.1109/ted.2021.3129722 | ||
| Özet |
| The letter reports that frequency response of heterojunction structure based on a spin-coated graphene-PVP thin film on silicon with gold Schottky contacts and the electronic properties obtained by using capacitance (C) and conductance (G/ ) versus voltage characteristics in the frequency range from 5 to 5 MHz. Furthermore, the electronic magnitudes were calculated. The accumulation capacitance observed at 3 V changes from 920 to 1094 pF. Here, empirically, the C and G/ values increased with a decreasing frequency, while increasing in depletion and accumulation regions with increasing voltages. However, particularly, the - - curves have peaks in low frequency values in the accumulation and depletion regions, these peaks decreased at high frequencies. Besides, an interface trap state density of 5.6– 12 cm−2.eV−1 with a relaxation time constant of 157– was deduced. Additionally, the … |
| Anahtar Kelimeler |
| C/G-V-f characteristics | Electric and dielectric properties | Graphene-PVP thin film | Metal-organic-semiconductor |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Scopus | 12 |
| Google Scholar | 12 |