High Dielectric Performance of Heterojunction Structures Based on Spin-Coated Graphene-PVP Thin Film on Silicon With Gold Contacts for Organic Electronics
Yazarlar (3)
Doç. Dr. Osman ÇİÇEK Kastamonu Üniversitesi, Türkiye
Gizem Koca Kastamonu Üniversitesi, Türkiye
Şemsettin Altındal
Gazi Üniversitesi, Türkiye
Gazi Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | IEEE Transactions on Electron Devices (Q2) | ||
| Dergi ISSN | 0018-9383 Dergi Bilgileri (2022) | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | Türkçe | Basım Tarihi | 12-2022 |
| Kabul Tarihi | – | Yayınlanma Tarihi | 01-01-2022 |
| Cilt / Sayı / Sayfa | 69 / 1 / 304–310 | DOI | 10.1109/TED.2021.3129722 |
| Makale Linki | http://dx.doi.org/10.1109/ted.2021.3129722 | ||
| UAK Araştırma Alanları |
Mems ve Mikrosistem Teknolojileri
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| Özet |
| The letter reports that frequency response of heterojunction structure based on a spin-coated graphene-PVP thin film on silicon with gold Schottky contacts and the electronic properties obtained by using capacitance (C) and conductance (G/ ) versus voltage characteristics in the frequency range from 5 to 5 MHz. Furthermore, the electronic magnitudes were calculated. The accumulation capacitance observed at 3 V changes from 920 to 1094 pF. Here, empirically, the C and G/ values increased with a decreasing frequency, while increasing in depletion and accumulation regions with increasing voltages. However, particularly, the - - curves have peaks in low frequency values in the accumulation and depletion regions, these peaks decreased at high frequencies. Besides, an interface trap state density of 5.6– 12 cm−2.eV−1 with a relaxation time constant of 157– was deduced. Additionally, the … |
| Anahtar Kelimeler |
| C/G-V-f characteristics | Electric and dielectric properties | Graphene-PVP thin film | Metal-organic-semiconductor |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Scopus | 13 |
| Google Scholar | 13 |