A highly Sensitive Temperature Sensor based on Au/graphene-PVP/n-Si type Schottky Diodes and the Possible Conduction Mechanisms in the wide range temperatures
Yazarlar (3)
Doç. Dr. Osman ÇİÇEK Kastamonu Üniversitesi, Türkiye
Şemsettin Altındal Gazi Üniversitesi, Türkiye
Yashar Azizian Kalandaragh University Of Mohaghegh Ardabili, İran
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | IEEE Sensors Journal (Q2) | ||
| Dergi ISSN | 1530-437X Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 12-2020 |
| Kabul Tarihi | – | Yayınlanma Tarihi | 01-12-2020 |
| Cilt / Sayı / Sayfa | 20 / 23 / 14081–14089 | DOI | 10.1109/JSEN.2020.3009108 |
| Makale Linki | https://ieeexplore.ieee.org/document/9141298/ | ||
| Özet |
| We report that the sensitive temperature response and possible Conduction Mechanisms (CMs) of Au/graphene-PVP/ n-Si type Schottky diodes (SDs) are investigated using the standard Thermionic Emission (TE) theory at low temperatures (LTs) and high temperatures (HTs). The obtained results indicate that the zero-apparent barrier height (φBo-φap) increases while the ideality factor (n), series and shunt resistances (Rs, Rsh), rectifying rate (at ±2V) and surface states (Nss) decrease with increasing temperature. The φBo, n and Rs values are also extracted from Cheung's functions and, then compared with those obtained TE theory. The conventional Richardson plot (ℓn(Io/T2)-q/kT) displays the deviation from the linearity at low-temperatures (T ≤ 140 K). Besides, the experimental value of Richardson constant (A*) deduced from the intercept of plot was found to be several orders lower than the theoretical value … |
| Anahtar Kelimeler |
| Au/graphene-PVP/n-Si structure | Sensitive temperature response | the possible conduction mechanisms |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Scopus | 61 |
| Google Scholar | 66 |