Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures
Yazarlar (6)
Doç. Dr. Osman ÇİÇEK Kastamonu Üniversitesi, Türkiye
Habibe Uslu Karabük Üniversitesi, Türkiye
Serhat Orkun Tan Karabük Üniversitesi, Türkiye
Hüseyin Tecimer Karabük Üniversitesi, Türkiye
İkram Orak Bingöl Üniversitesi, Türkiye
Şemsettin Altındal Gazi Üniversitesi, Türkiye
Makale Türü Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
Dergi Adı Composites Part B: Engineering
Dergi ISSN 1359-8368 Wos Dergi Scopus Dergi
Dergi Tarandığı Indeksler SCI
Makale Dili İngilizce Basım Tarihi 03-2017
Kabul Tarihi Yayınlanma Tarihi 01-03-2017
Cilt / Sayı / Sayfa 113 / 0 / 14–23 DOI 10.1016/j.compositesb.2017.01.012
Makale Linki https://www.sciencedirect.com/science/article/pii/S1359836816326944
Özet
In the present study, Schottky diodes (SDs) were produced with and without interlayer to evaluate synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites on the electrical (i.e. ideality factor (n), saturation current (Io), barrier height (ФBo), shunt (Rsh) and series (Rs) resistances) and photoconductivity (i.e. photocurrent (Iph), responsivity (R), photoconductivity sensitivity (Sph), photosensitivity) parameters of Au/n-GaAs devices. Electrical parameters of Au/n-GaAs (MS) type (D1), Au/pure PVA/n-GaAs (MPS) type (D2) and Au/Gr-doped PVA/n-GaAs (MPS) type (D3) structures have been obtained to the current-voltage (I-V) measurements using thermionic emission (TE) theory, Cheung's method and modified Norde's methods and, moreover, compared each other. The resistance (Ri) for these SDs was additionally calculated from Ohm's law as function of voltage for each diode …
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