| Yazarlar |
Doç. Dr. Osman ÇİÇEK
Kastamonu Üniversitesi, Türkiye |
| Özet |
| The letter reports the performance assessment of Au/n-Si type Schottky Junction Structure (SJS) with and without the graphene-PVP layer, classified as SJS1 and SJS2 devices. The electronic parameters by using the developed LabVIEW based program were calculated from raw data of I-V, C-V and G/ω-V measurements at room temperature. According to Thermionic Emission (TE) theory, the graphene-PVP layer significantly modified the barrier height than the other structure. Using the Ohm's Law, it is found that the $R_{sh}$ magnitude increases, while the $R_{s}$ magnitude decreases for SJS2, according to SJS1 type device. Alternatively, using Cheung's and the modified Norde functions for the accuracy and reliability of the results, the obtained n, $\phi _{Bo}$, $R_{s}$ values by both equations are in good agreement. Using the C-2-V and G/ω-V characteristics, the magnitudes of the electronic parameters, such as $\phi _{Bo}\,_{{\rm{(C-V)}}}$, $V_{bi}$, $V_{D}$, $N_{D}$, $E_{F}$, $R_{s}$, etc., for the devices were calculated to supply more information. Also, the $C_{i}$ and $C_{ox}$ magnitudes were calculated 1.299 × 10-10 F and 1.192 × 10-10 F at 3 V and then, the interface layer thicknesses were obtained as 2.08 nm and 68.8 nm for SJS1 and SJS2, respectively. It can be concluded that the graphene-PVP layer significantly affects the quality and performance of Au/n-Si type SJS devices. |
| Anahtar Kelimeler |
| Schottky Junction Structure,electronic properties,I-V,C-V and G/omega-V characteristics,graphene-PVP |
| Makale Türü | Özgün Makale |
| Makale Alt Türü | SSCI, AHCI, SCI, SCI-Exp dergilerinde yayımlanan tam makale |
| Dergi Adı | IEEE TRANSACTIONS ON NANOTECHNOLOGY |
| Dergi ISSN | 1536-125X |
| Dergi Tarandığı Indeksler | SCI |
| Makale Dili | İngilizce |
| Basım Tarihi | 02-2020 |
| Cilt No | 19 |
| Sayı | 2 |
| Sayfalar | 172 / 178 |
| Doi Numarası | 10.1109/TNANO.2020.2972036 |
| Makale Linki | https://ieeexplore.ieee.org/document/8995779/ |
| Atıf Sayıları | |
| WoS | 2 |
| SCOPUS | 2 |
| Google Scholar | 3 |
