Improving the Electronic Properties of Au/n-Si Type Schottky Junction Structure With Graphene-PVP Nano-Thin Film by Using the I-V, C-2-V and G/ω-V Characteristics
Yazarlar (1)
Doç. Dr. Osman ÇİÇEK Kastamonu Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | IEEE Transactions on Nanotechnology | ||
| Dergi ISSN | 1536-125X Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI | ||
| Makale Dili | İngilizce | Basım Tarihi | 02-2020 |
| Kabul Tarihi | – | Yayınlanma Tarihi | 01-01-2020 |
| Cilt / Sayı / Sayfa | 19 / 1 / 172–178 | DOI | 10.1109/TNANO.2020.2972036 |
| Makale Linki | https://ieeexplore.ieee.org/document/8995779/ | ||
| Özet |
| The letter reports the performance assessment of Au/n-Si type Schottky Junction Structure (SJS) with and without the graphene-PVP layer, classified as SJS1 and SJS2 devices. The electronic parameters by using the developed LabVIEW based program were calculated from raw data of I-V, C-V and G/ω-V measurements at room temperature. According to Thermionic Emission (TE) theory, the graphene-PVP layer significantly modified the barrier height than the other structure. Using the Ohm's Law, it is found that the R8h magnitude increases, while the R8 magnitude decreases for SJS2, according to SJS1 type device. Alternatively, using Cheung's and the modified Norde functions for the accuracy and reliability of the results, the obtained n, φBo, R8 values by both equations are in good agreement. Using the C-2-V and G/ω-V characteristics, the magnitudes of the electronic parameters, such as φBo(C-V), Vbi, VD … |
| Anahtar Kelimeler |
| C-V and G/ω-V characteristics | electronic properties | graphene-PVP | I-V | Schottky Junction Structure |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Scopus | 3 |
| Google Scholar | 4 |