Role of Graphene-Doped Organic/Polymer Nanocomposites on the Electronic Properties of Schottky Junction Structures for Photocell Applications
Yazarlar (4)
Doç. Dr. Osman ÇİÇEK Kastamonu Üniversitesi, Türkiye
Serhat O. Tan Karabük Üniversitesi, Türkiye
Hüseyin Tecimer Karabük Üniversitesi, Türkiye
Prof. Dr. Şemsettin Altındal Gazi Üniversitesi, Türkiye
| Makale Türü |
Özgün Makale
(SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
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| Dergi Adı | Journal of Electronic Materials | ||
| Dergi ISSN | 0361-5235 Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI | ||
| Makale Dili | İngilizce | Basım Tarihi | 12-2018 |
| Kabul Tarihi | 01-09-2018 | Yayınlanma Tarihi | 19-09-2018 |
| Cilt / Sayı / Sayfa | 47 / 12 / 7134–7142 | DOI | 10.1007/s11664-018-6644-4 |
| Makale Linki | http://link.springer.com/10.1007/s11664-018-6644-4 | ||
| Özet |
| In this study, the current–voltage characteristics of non-doped and distinct graphene (Gr)-doped polyvinyl alcohol (PVA) interlayers in metal/organic polymer semiconductor type Schottky junction structures (SJSs) were investigated on both forward and reverse biases under distinct levels of illumination. The distinct doping concentration ratios (1%, 3% and 7%) of the Gr added to the PVA interlayers were compared by taking into account the basic electrical parameters, such as saturation current (Io), ideality factor (n), barrier height (ΦBo), series (Rs) and shunt resistance (Rsh). The 7% Gr-doped structure displayed the lowest Io values at zero bias. Moreover, the results indicated that the 7% Gr-doped PVA decreased the n value but increased the ΦBo value compared with values associated with structures that have different doping concentrations. In terms of quality and reliability, the Rs and Rsh values of the SJSs … |
| Anahtar Kelimeler |
| basic electronic properties | Graphene | I–V characteristics | organic polymer nanocomposites | photovoltaic |
| Atıf Sayıları | |
| Scopus | 23 |
| Google Scholar | 27 |