| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Composites Part B Engineering (Q1) | ||
| Dergi ISSN | 1359-8368 Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 05-2019 |
| Kabul Tarihi | – | Yayınlanma Tarihi | 01-10-2019 |
| Cilt / Sayı / Sayfa | 174 / 1 / – | DOI | 10.1016/j.compositesb.2019.106987 |
| Makale Linki | https://linkinghub.elsevier.com/retrieve/pii/S135983681930890X | ||
| Özet |
| In this work, AuPd/n-GaAs and Ag/n-GaAs metal–semiconductor structures, which is known as Schottky Junction Structures (SJSs), with various ZnO thin film thickness (25–250 nm) classified as Group AuPd and Group Ag were produced to investigate electronic properties on SJSs. The current-voltage (I–V) characteristics of SJSs operating in their forward and reverse regions operating at ±3 V were measured at room temperature (295 K). The electronics parameters such as the series resistance (Rs), the shunt resistance (Rsh), the ideality factor (n) and the barrier height (ΦB0) were calculated by using thermionic emission (TE) theory, Ohm's law, Cheung and Cheung's function and modified Norde's function. Labview® based characterization tool developed to calculate the electronic parameters. The results were compared according to the various thicknesses and different rectifier contacts. Experimentally, if the … |
| Anahtar Kelimeler |
| A nano-structures | A. Layered structures | A. Thin films | B. Electrical properties |
| Atıf Sayıları | |
| Scopus | 14 |
| Google Scholar | 21 |
| Dergi Adı | COMPOSITES PART B-ENGINEERING |
| Yayıncı | Elsevier Ltd |
| Açık Erişim | Hayır |
| ISSN | 1359-8368 |
| E-ISSN | 1879-1069 |
| CiteScore | 25,6 |
| SJR | 2,961 |
| SNIP | 2,673 |