Comparative investigation on electronic properties of metal-semiconductor structures with variable ZnO thin film thickness for sensor applications
Yazarlar (4)
Doç. Dr. Osman ÇİÇEK Kastamonu Üniversitesi, Türkiye
Öğr. Gör. Dr. Sedat KURNAZ Kastamonu Üniversitesi, Türkiye
Atakan Bekar Sinop Üniversitesi, Türkiye
Prof. Dr. Özgür ÖZTÜRK Kastamonu Üniversitesi, Türkiye
Makale Türü Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
Dergi Adı Composites Part B Engineering (Q1)
Dergi ISSN 1359-8368 Wos Dergi Scopus Dergi
Dergi Tarandığı Indeksler SCI-Expanded
Makale Dili İngilizce Basım Tarihi 05-2019
Kabul Tarihi Yayınlanma Tarihi 01-10-2019
Cilt / Sayı / Sayfa 174 / 1 / – DOI 10.1016/j.compositesb.2019.106987
Makale Linki https://linkinghub.elsevier.com/retrieve/pii/S135983681930890X
Özet
In this work, AuPd/n-GaAs and Ag/n-GaAs metal–semiconductor structures, which is known as Schottky Junction Structures (SJSs), with various ZnO thin film thickness (25–250 nm) classified as Group AuPd and Group Ag were produced to investigate electronic properties on SJSs. The current-voltage (I–V) characteristics of SJSs operating in their forward and reverse regions operating at ±3 V were measured at room temperature (295 K). The electronics parameters such as the series resistance (Rs), the shunt resistance (Rsh), the ideality factor (n) and the barrier height (ΦB0) were calculated by using thermionic emission (TE) theory, Ohm's law, Cheung and Cheung's function and modified Norde's function. Labview® based characterization tool developed to calculate the electronic parameters. The results were compared according to the various thicknesses and different rectifier contacts. Experimentally, if the …
Anahtar Kelimeler
A nano-structures | A. Layered structures | A. Thin films | B. Electrical properties