Evaluation of electrical and photovoltaic behaviours as comparative of Au n GaAs MS diodes with and without pure and graphene Gr doped polyvinyl alcohol PVA interfacial layer under dark and illuminated conditions

ÇİÇEK, Osman; Uslu, Habibe; Tan, Serhat Orkun; Tecimer, Hüseyin; Altındal, Şemsettin; Uslu, İbrahim

doi:10.1016/j.compositesb.2016.05.042

Evaluation of electrical and photovoltaic behaviours as comparative of Au n GaAs MS diodes with and without pure and graphene Gr doped polyvinyl alcohol PVA interfacial layer under dark and illuminated conditions

Yazarlar
Doç. Dr. Osman ÇİÇEK Kurum Bilgileri Mühendislik ve Mimarlık Fakültesi Elektrik-Elektronik Mühendisliği Elektronik Özgeçmiş Sayfası İletişim Bilgileri: (366)280-1000 Kastamonu Üniversitesi, Mühendislik ve Mimarlık Fak., Elektrik ve Elektronik Müh. 37150 Merkez/Kastamonu Kastamonu Üniversitesi, Türkiye
Habibe Uslu Karabük Üniversitesi, Türkiye
Serhat Orkun Tan Karabük Üniversitesi, Türkiye
Hüseyin Tecimer Karabük Üniversitesi, Türkiye
Şemsettin Altındal Gazi Üniversitesi, Türkiye
İbrahim Uslu Gazi Üniversitesi, Türkiye

Özet

Au/n-GaAs (MS) type Schottky diodes (SDs) were fabricated with and without pure and Gr-doped PVA interlayer to evaluate the effects of Gr-doped PVA interlayer on the basic electrical parameters (i.e. saturation current (Io), ideality factor (n), barrier height (ΦBo), series (Rs) and shunt resistances (Rsh) both under dark and illuminated conditions (50-200 W), at room temperature. Using different calculation methods (i.e. thermionic emission (TE) model, Ohm's Law and Norde's method), these parameters were obtained from the current-voltage (I-V) data and compared with each other in various conditions. In our research, it is clear that there are a decrease in Rs value and an increase in Rsh value for Gr-doped PVA in comparison with the pure PVA structure under dark and illuminated conditions, therefore rectifier rate (RR = IF/IR), is the proof of the quality for diodes, significantly improved. Also, the ΦBo values with interlayer (pure and Gr-doped PVA) are lower than without. Consequently, these results indicate that the PVA (pure and Gr-doped) changed effectively the BH according to other structure and, moreover, Gr-doped PVA layer significantly improved the quality of Au/PVA/n-GaAs structure under dark and illuminated conditions.

Anahtar Kelimeler

Nano-structures,Polymer (textile) fibre,Electrical properties

Makale Türü	Özgün Makale
Makale Alt Türü	SSCI, AHCI, SCI, SCI-Exp dergilerinde yayımlanan tam makale
Dergi Adı	COMPOSITES PART B-ENGINEERING
Dergi ISSN	1359-8368
Dergi Tarandığı Indeksler	SCI
Makale Dili	İngilizce
Basım Tarihi	08-2016
Cilt No	98
Sayı	1
Sayfalar	260 / 268
Doi Numarası	10.1016/j.compositesb.2016.05.042
Makale Linki	http://linkinghub.elsevier.com/retrieve/pii/S1359836816307053

BM Sürdürülebilir Kalkınma Amaçları

Atıf Sayıları
SCOPUS	76

Evaluation of electrical and photovoltaic behaviours as comparative of Au n GaAs MS diodes with and without pure and graphene Gr doped polyvinyl alcohol PVA interfacial layer under dark and illuminated conditions

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Evaluation of electrical and photovoltaic behaviours as comparative of Au n GaAs MS diodes with and without pure and graphene Gr doped polyvinyl alcohol PVA interfacial layer under dark and illuminated conditions

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