Electrical characterizations of Au ZnO n GaAs Schottky diodes under distinct illumination intensities
Yazarlar (6)
S. O. Tan Karabük Üniversitesi, Türkiye
H. Uslu Tecimer Karabük Üniversitesi, Türkiye
Doç. Dr. Osman ÇİÇEK Kastamonu Üniversitesi, Türkiye
H. Tecimer Karabük Üniversitesi, Türkiye
Orak Bingöl Üniversitesi, Türkiye
Altındal Gazi Üniversitesi, Türkiye
| Makale Türü |
Özgün Makale
(SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
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| Dergi Adı | Journal of Materials Science Materials in Electronics (Q2) | ||
| Dergi ISSN | 0957-4522 Dergi Bilgileri (2016) | ||
| Dergi Tarandığı Indeksler | SCI | ||
| Makale Dili | İngilizce | Basım Tarihi | 08-2016 |
| Kabul Tarihi | – | Yayınlanma Tarihi | 20-04-2016 |
| Cilt / Sayı / Sayfa | 27 / 8 / 8340–8347 | DOI | 10.1007/s10854-016-4843-4 |
| Makale Linki | http://link.springer.com/10.1007/s10854-016-4843-4 | ||
| UAK Araştırma Alanları |
Mems ve Mikrosistem Teknolojileri
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| Özet |
| The Au/ZnO/n-GaAs Schottky barrier diode was fabricated and examined regarding to its current–voltage characteristics under distinct illumination intensities at room temperature. The reverse biased current increases with increasing illumination level while forward biased current is almost unchanged with illumination which states that the fabricated diodes exhibit photosensitive character or photodiode behavior. Hence, the shunt resistance is decreased with illumination while the series resistance is almost remained constant. The increment in the ideality factor after illumination can be ascribed to the assumption of inhomogeneities at M/S interface. Considering the ideality factor and the voltage dependent effective barrier height, the energy distribution profiles of surface states (Nss) were formed by the forward bias current–voltage data and increased with increasing illumination level. The Nss values acquired by … |
| Anahtar Kelimeler |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Scopus | 67 |
| Google Scholar | 77 |