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Frequency Response of C–V and G/ω-V Characteristics of Au/(Nanographite-doped PVP)/n-Si Structures      
Yazarlar
Ahmet Muhammed Akbaş
Doç. Dr. Osman ÇİÇEK
Kastamonu Üniversitesi, Türkiye
Şemsettin Altındal
Gazi Üniversitesi, Türkiye
Yashar Azizian Kalandaragh
Özet
This paper reports that frequency response on profile of C–V–ƒ and G/ω–V–ƒ characteristics of spin-coated nanographite (NG)-doped polyvinylpyrrolidone (PVP)/n-Si structures in a wide frequency (1 kHz–5 MHz) and voltage (± 3 V) ranges at room temperature. Hereby, the basic parameters of the structure such as diffusion potential (VD), doping donor density (ND), Fermi energy level (EF), maximum electric field (Em), depletion layer thickness (Wd), and barrier height (ΦB) are derived by using the intercept and slope of C−2–V–ƒ plot for each frequency. Additionally, the energy density distribution of surface states (Nss) and their relaxation time values (τ) are also attained from the conduction method and their values are found as 4.999 × 1012 eV−1 cm−2 and 2.92 µs at 0.452 eV, and 3.857 × 1012 eV−1 cm−2 and 164 µs at 0.625 eV, respectively. The lower Nss values are the consequence of passivation effect of the used nanographite (NG)-PVP polymer interlayer. As a result, the polymer interlayer based nanographite (NG)-PVP is candidate instead of the widely used oxide/insulator layer for the purpose of decreasing the surface states or dislocations.
Anahtar Kelimeler
Makale Türü Özgün Makale
Makale Alt Türü SSCI, AHCI, SCI, SCI-Exp dergilerinde yayımlanan tam makale
Dergi Adı Journal of Materials Science: Materials in Electronics
Dergi ISSN 0957-4522
Dergi Tarandığı Indeksler SCI-Expanded
Dergi Grubu Q3
Makale Dili İngilizce
Basım Tarihi 01-2021
Cilt No 32
Sayfalar 993 / 1006
Doi Numarası 10.1007/s10854-020-04875-6
Makale Linki http://dx.doi.org/10.1007/s10854-020-04875-6
BM Sürdürülebilir Kalkınma Amaçları
Atıf Sayıları
WoS 19
SCOPUS 20
Google Scholar 21
Frequency Response of C–V and G/ω-V Characteristics of Au/(Nanographite-doped PVP)/n-Si Structures

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