Frequency Response of C–V and G/ω-V Characteristics of Au/(Nanographite-doped PVP)/n-Si Structures
Yazarlar (4)
Ahmet Muhammed Akbaş Gazi Üniversitesi, Türkiye
Doç. Dr. Osman ÇİÇEK Kastamonu Üniversitesi, Türkiye
Prof. Dr. Şemsettin Altındal Gazi Üniversitesi, Türkiye
Y. Azizian-Kalandaragh University Of Mohaghegh Ardabili, İran
| Makale Türü |
Özgün Makale
(SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
|
||
| Dergi Adı | Journal of Materials Science Materials in Electronics (Q3) | ||
| Dergi ISSN | 0957-4522 Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 01-2021 |
| Kabul Tarihi | 10-11-2020 | Yayınlanma Tarihi | 21-11-2020 |
| Cilt / Sayı / Sayfa | 32 / 1 / 993–1006 | DOI | 10.1007/s10854-020-04875-6 |
| Makale Linki | http://dx.doi.org/10.1007/s10854-020-04875-6 | ||
| Özet |
| This paper reports that frequency response on profile of C–V–ƒ and G/ω–V–ƒ characteristics of spin-coated nanographite (NG)-doped polyvinylpyrrolidone (PVP)/n-Si structures in a wide frequency (1 kHz–5 MHz) and voltage (± 3 V) ranges at room temperature. Hereby, the basic parameters of the structure such as diffusion potential (VD), doping donor density (ND), Fermi energy level (EF), maximum electric field (Em), depletion layer thickness (Wd), and barrier height (ΦB) are derived by using the intercept and slope of C−2–V–ƒ plot for each frequency. Additionally, the energy density distribution of surface states (Nss) and their relaxation time values (τ) are also attained from the conduction method and their values are found as 4.999 × 1012 eV−1 cm−2 and 2.92 µs at 0.452 eV, and 3.857 × 1012 eV−1 cm−2 and 164 µs at 0.625 eV, respectively. The lower Nss values are the consequence of passivation effect … |
| Anahtar Kelimeler |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Scopus | 23 |
| Google Scholar | 24 |